Yangjin Lee#, Linxuan Li#, Weihan Zhang#, Uje Choi, Kihyun Lee, Young-Min Kim, Wei Ji*, Wu Zhou*, Kwanpyo Kim*, and Alex Zettl*
Abstract:
Low-dimensional magnetic materials have garnered significant interest due to their unique physical properties and potential applications. Nevertheless, the synthesis of one-dimensional (1D) magnetic materials presents challenges, and the properties of these 1D materials at the single-chain limit have not been well investigated. We here explore experimentally and theoretically 1D CrX2 (X= Cl, Br, I) magnetic single-chains residing within carbon nanotubes. Single chains of CrX2 are confirmed by atomic-resolution scanning transmission electron microscopy imaging and spectroscopy analysis. Electron energy loss spectroscopy clearly reveals the high-spin state of Cr atoms within the chain. Notably, we present the first precise measurement and analysis of Cr spin state at the single-chain level, revealing that these spin states can be controlled by the local atomic bonding configuration (CrX2 versus CrX3 phases). Density functional theory calculations support the structural stability and provide the magnetic and electronic properties of the 1D CrX2 chains.
Two-dimensional (2D) non-van der Waals (vdW) Cr5Te8 has attracted widespread research interest for its air stability and thickness-dependent magnetic properties. However, the growth of large-scale ultrathin 2D Cr5Te8 remains challenging. Here, we selected GaTe powder as the precursor to supply Te monomers and fabricated submillimeter 2D Cr5Te8 nanosheets. By optimizing the growth temperature and source–substrate distance (DSS), we successfully achieved Cr5Te8 nanosheets with a lateral size of up to ∼0.19 mm and corresponding thickness down to ∼4.8 nm. The role of GaTe is to enhance the efficient Te atom concentration, which promotes the lateral growth of Cr5Te8 nanosheets. Furthermore, our findings reveal the appearance of Cr5Te8 nanosheets exhibiting serrated edges and a stacked structure like those of wedding cakes. Magnetic property measurement revealed the intense out-of-plane ferromagnetism in Cr5Te8, with a Curie temperature (TC) of 172 K. This work paves the way for the controllable growth of submillimeter ultrathin 2D ferromagnetic crystals and lays the foundation for the future synthesis of millimeter ultrathin ferromagnets.
Yating Li, Mengmeng Niu, Junpeng Zeng, Quan Zhou, Xu Wu, Wei Ji, Yeliang Wang, Ren Zhu, Jingsi Qiao, Jianbin Xu, Yi Shi, Xinran Wang, and Daowei He
Abstract:
Organic semiconductors are highly promising as channel materials for energy-efficient, cost-effective, and flexible electronics. However, grain boundaries (GBs) can cause significant device performance variation, posing a major challenge for the development of high-performance organic circuits. In this work, we effectively passivated GB-induced traps in monolayer organic thin-film transistors (OTFTs) via p-type doping with the organic salt TrTPFB. The doping strategy broadens the mobility edge, effectively shielding GB-induced energy barriers and Coulomb scattering, and promotes deeper nonlocalized hybridization states for conduction. Consequently, the charge transport mechanism transitions from multiple trapping and release (MTR) to a more band-like behavior, even when GBs are present within the device channel. The doped OTFTs demonstrate ultralow mobility variation (1.4%) and threshold voltage variation (4.9%), as well as record-low contact resistant of RC = 0.6 Ω·cm, outperforming most single-crystal technologies. These performance metrics render doped monolayer polycrystalline films highly promising candidates for industrial-scale organic electronics.
Zemin Pan#, Wenqi Xiong#, Jiaqi Dai#, Hui Zhang#, Yunhua Wang, Tao Jian, Xingxia Cui, Jinghao Deng, Xiaoyu Lin, Zhengbo Cheng, Yusong Bai, Chao Zhu, Da Huo, Geng Li, Min Feng, Jun He, Wei Ji*, Shengjun Yuan*, Fengcheng Wu*, Chendong Zhang*, and Hong-Jun Gao
Abstract:
Although the kagome model is fundamentally two-dimensional, the essential kagome physics, i.e., the kagome-bands-driven emergent electronic states, has yet to be explored in the monolayer limit. Here, we present the experimental realization of kagome physics in monolayer Mo33Te56, showcasing both ferromagnetic ordering and a correlated insulating state with an energy gap of up to 15 meV. Using a combination of scanning tunnelling microscopy and theoretical calculations, we find a structural phase of the monolayer Mo-Te compound, which forms a mirror-twin boundary loop superlattice exhibiting kagome geometry and multiple sets of kagome bands. The partial occupancy of these nearly flat bands results in Fermi surface instability, counteracted by the emergence of ferromagnetic order (with a coercive field ~0.1 T, as observed by spin-polarized STM) and the opening of a correlated hard gap. Our work establishes a robust framework featuring well-defined atomic and band structures, alongside the intrinsic two-dimensional nature, essential for the rigorous examination of kagome physics.
Wenjuan Zhao#, Xieyu Zhou#, Dayu Yan#, Yuan Huang*, Cong Li, Qiang Gao, Paolo Moras, Polina M. Sheverdyaeva, Hongtao Rong, Yongqing Cai, Eike F. Schwier, Xixia Zhang, Cheng Shen, Yang Wang, Yu Xu, Wei Ji, Chen Liu, Youguo Shi, Lin Zhao, Lihong Bao, Qingyan Wang, Kenya Shimada, Xutang Tao, Guangyu Zhang, Hongjun Gao, Zuyan Xu, Xingjiang Zhou*, Guodong Liu*
Abstract:
An in-depth understanding of the electronic structure of 2H-MoTe2 at the atomic layer limit is a crucial step towards its exploitation in nanoscale devices. Here, we show that millimeter-sized monolayer (ML) MoTe2 samples, as well as smaller sized bilayer (BL) samples, can be obtained using the mechanical exfoliation technique. The electronic structure of these materials is investigated by Angle-Resolved Photoemission Spectroscopy (ARPES) for the first time and Density Functional Theory (DFT) calculations. The comparison between experiments and theory allows us to describe ML MoTe2 as a semiconductor with direct gap at K point. This scenario is reinforced by the experimental observation of the conduction band minimum at K in Rb-doped ML MoTe2, resulting in a gap of at least 0.924 eV. In the BL MoTe2 system the maxima of the bands at Γ and K display very similar energies, thus leaving the door open to a direct gap scenario, in analogy to WSe2. The monotonic increase in the separation between spin-split bands at K while moving from ML to BL and bulk-like MoTe2 is attributed to interlayer coupling. Our findings can be considered as a reference to understand Quantum Anomalous and Fractional Quantum Anomalous Hall Effects recently discovered in ML and BL MoTe2 based moir´ e heterostructures.
