Discovery and manipulation of van der Waals polarons in Sb2O3 ultrathin molecular crystal

Discovery and manipulation of van der Waals polarons in Sb2O3 ultrathin molecular crystal

ZhiHao Zhang, Linlu Wu, Mao-Peng Miao, Hao-Jun Qin, Gan Chen, Min Cai, Lixin Liu, Lan-Fang Zhu, Wen-Hao Zhang, Tianyou Zhai, Wei Ji, and Ying Shuang Fu

Manipulating single electrons at the atomic scale is vital for mastering complex surface processes governed by the transfer of individual electrons. Polarons, comprised of electrons stabilized by electron-phonon coupling, offer a pivotal medium for such manipulation. Here, using scanning tunneling microscopy and spectroscopy (STM/STS) and density functional theory (DFT) calculations, we report the identification and manipulation of a new type of polaron, dubbed van der Waals (vdW) polaron, within mono- to tri-layer ultrathin films composed of Sb2O3 molecules that are bonded via vdW attractions. The Sb2O3 films were grown on a graphene-covered SiC(0001) substrate via molecular beam epitaxy. Unlike prior molecular polarons, STM imaging observed polarons at the interstitial sites of the molecular film, presenting unique electronic states and localized band bending. DFT calculations revealed the lowest conduction band as an intermolecular bonding state, capable of ensnaring an extra electron through locally diminished intermolecular distances, thereby forming an intermolecular vdW polaron. We also demonstrated the ability to generate, move, and erase such vdW polarons using an STM tip. Our work uncovers a new type of polaron stabilized by coupling with intermolecular vibrations where vdW interactions dominate, paving the way for designing atomic-scale electron transfer processes, and enabling precise tailoring of electron-related properties and functionalities.

Intralayer strain tuned interlayer magnetism in bilayer CrSBr

Intralayer strain tuned interlayer magnetism in bilayer CrSBr

Nanshu Liu, Cong Wang, Changlin Yan, Changsong Xu, Jun Hu, Yanning Zhang, and Wei Ji

Interlayer magnetism was tuned by many interlayer means, e.g., stacking, distance, and external fields in
two-dimensional (2D) magnets. As an exception, the interlayer magnetism of CrSBr few layers was, however,
experimentally changed by applied intralayer strains [Nat. Nanotechnol. 17, 256 (2022)], the mechanism of
which is yet to be unveiled. Here, we uncovered its mechanism by investigating in-plane strained bilayer
CrSBr using density functional theory calculations. Under in-plane tensile strain, wavefunction overlaps are
strengthened for Br p electrons within each CrSBr layer, which delocalizes intralayer electrons and, as a
consequence, promotes interlayer electron hopping. A negative interlayer Poisson’s ratio also enlarges interlayer
spacing for bilayer CrSBr, which reduces the interlayer Pauli repulsion. This joint effect, further verified by
examining interlayer sliding and interfacial element substitution, leads to an interlayer antiferromagnetic to
ferromagnetic transition, consistent with the previous experimental observation. This mechanism enables a route
to tune interlayer magnetism by modifying intralayer electron localization in 2D magnets.

Competing multiferroic phases in monolayer and few-layer NiI2

Competing multiferroic phases in monolayer and few-layer NiI2

Nanshu Liu, Cong Wang, Changlin Yan, Changsong Xu, Jun Hu, Yanning Zhang, and Wei Ji

A recent experiment reported type-II multiferroicity in monolayer (ML) NiI2 based on a presumed spiral magnetic configuration (Spiral-B), which is, as we found here, under debate in the ML limit. Freestanding ML NiI2 breaks its C3 symmetry, as it prefers a striped antiferromagnetic order (AABB-AFM) along with an intralayer antiferroelectric (AFE) order. However, substrate confinement may preserve the C3 symmetry and/or apply tensile strain to the ML. This leads to another spiral magnetic order (SpiralIVX), while 2L shows a different order (SpiralVX) and Spiral-B dominates in thicker layers. Thus, three multiferroic phases, namely, SpiralB+FE, Spiral-IVX +FE, Spiral-VX+FE, and an anti-multiferroic AABB-AFM+AFE one, show layer-thickness-dependent and geometry-dependent dominance, ascribed to competitions among thickness-dependent Kitaev, biquadratic, and Heisenberg spin–exchange interactions and single-ion magnetic anisotropy. Our theoretical results clarify the debate on the multiferroicity of ML NiI2 and shed light on the role of layer-stacking-induced changes in noncollinear spin–exchange interactions and magnetic anisotropy in thickness-dependent magnetism.

Spin-resolved imaging of atomic-scale helimagnetism in mono- and bi-layer NiI2

Spin-resolved imaging of atomic-scale helimagnetism in mono- and bi-layer NiI2

Mao-Peng Miao, Nanshu Liu, Wen-Hao Zhang, Jian-Wang Zhou, Dao-Bo Wang, Cong Wang, Wei Ji, and Ying-Shuang Fu

Noncollinear magnetic orders in monolayer van der Waals magnets are crucial for probing delicate magnetic interactions under minimal spatial constraints and advancing miniaturized spintronic devices. Despite their significance, achieving atomic-scale identification remains challenging. In this study, we utilized spin-polarized scanning tunneling microscopy and density functional theory calculations to identify spin-spiral orders in mono- and bi-layer NiI2, grown on graphene-covered SiC(0001) substrates. We discovered two distinct spin-spiral states with Q vectors aligning and deviating by 7° from the lattice direction, exhibiting periodicities of 4.54 and 5.01 times the lattice constant, respectively. These findings contrast with bulk properties and align closely with our theoretical predictions. Surprisingly, the finite sizes of monolayers induce incommensurability with the spin-spiral period, facilitating collective spin switching behavior under magnetic fields. Our research reveals intrinsic noncollinear magnetism at the monolayer limit with unprecedented resolution, paving the way for exploring novel spin phenomena.

Exotic electronic states in gradient-strained untwisted graphene bilayers

Exotic electronic states in gradient-strained untwisted graphene bilayers

Zeyu Liu, Xianghua Kong, Zewen Wu, Linwei Zhou, Jingsi Qiao and Wei Ji

Many exotic electronic states were discovered in moiré superlattices hosted in twisted homo-bilayers in the past decade, including unconventional superconductivity and correlated insulating states. However, it is technically challenging to precisely and orderly stack two or more layers into certain twisting angles. Here, we presented a theoretical strategy that introduces moiré superlattices in untwisted homo-bilayers by applying different in-plane strains on the two layers of a graphene homo-bilayer, respectively. Our density functional theory calculations indicate that the graphene bilayer exhibits substantial out-of-plane corrugations that form a coloring-triangular structure in each moiré supercell under gradient in-plane strains. Such structure leads to a set of kagome bands, namely one flat-band and, at least, one Dirac band, developing along the M-K path after band-folding. For comparison, uniformly applied in-plane strain only yields a nearly flat band within path K-G, which is originated from local quantum confinement. These findings highlight the gradient strain as a route to feasibly fabricate exotic electronic states in untwisted flexible homo-bilayers.