Orbital-Ordering Driven Simultaneous Tunability of Magnetism and Electric Polarization in Strained Monolayer VCl3

Orbital-Ordering Driven Simultaneous Tunability of Magnetism and Electric Polarization in Strained Monolayer VCl3

Chinese Physics Letters 41, 047501 (2024).

Deping Guo (郭的坪)#, Cong Wang (王聪)#, Lvjin Wang (王侣锦), Yunhao Lu (陆赟豪), Hua Wu (吴骅), Yanning Zhang (张妍宁), and Wei Ji (季威)*

Abstract:

Two-dimensional (2D) van der Waals magnetic materials have promising and versatile electronic and magnetic properties in the 2D limit, indicating a considerable potential to advance spintronic applications. Theoretical predictions thus far have not ascertained whether monolayer VCl3 is a ferromagnetic (FM) or anti-FM monolayer; this also remains to be experimentally verified. We theoretically investigate the influence of potential factors, including 𝐶3 symmetry breaking, orbital ordering, epitaxial strain, and charge doping, on the magnetic ground state. Utilizing first-principles calculations, we predict a collinear type-III FM ground state in monolayer VCl3 with a broken 𝐶3 symmetry, wherein only the former two of three 𝑡2g orbitals (𝑎1g, 𝑒 𝜋 g2 and 𝑒 𝜋 g1) are occupied. The atomic layer thickness and bond angles of monolayer VCl3 undergo abrupt changes driven by an orbital ordering switch, resulting in concomitant structural and magnetic phase transitions. Introducing doping to the underlying Cl atoms of monolayer VCl3 without 𝐶3 symmetry simultaneously induces in- and out-of-plane polarizations. This can achieve a multiferroic phase transition if combined with the discovered adjustments of magnetic ground state and polarization magnitude under strain. The establishment of an orbital-ordering driven regulatory mechanism can facilitate deeper exploration and comprehension of magnetic properties of strongly correlated systems in monolayer VCl3.

DOI: 10.1088/0256-307X/41/4/047501

Modulation of supramolecular structure by stepwise removal of tert-butyl groups from tetraazaperopyrene derivatives on Ag(111)

Modulation of supramolecular structure by stepwise removal of tert-butyl groups from tetraazaperopyrene derivatives on Ag(111)

J. Chem. Phys. 160, 134308 (2024),

Boyu Fu#; Yurou Guan#; Wei Yuan#; Jianqun Geng#; Zhenliang Hao#; Zilin Ruan; Shijie Sun ; Yong Zhang; Wei Xiong; Lei Gao*; Yulan Chen*; Wei Ji*; Jianchen Lu*; Jinming Cai*

Abstract:

Tert-butyl functional groups can modulate the self-assembly behavior of organic molecules on surfaces. However, the precise construction of supramolecular architectures through their controlled thermal removal remains a challenge. Herein, we precisely controlled the removal amount of tert-butyl groups in tetraazaperopyrene derivatives by stepwise annealing on Ag(111). The evolution of 4tBu-TAPP supramolecular self-assembly from the grid-like structure composed of 3tBu-TAPP through the honeycomb network formed by 2tBu-TAPP to the one-dimensional chain co-assembled by tBu-TAPP and TAPP was successfully realized. This series of supramolecular nanostructures were directly visualized by high resolution scanning tunneling microscopy. Tip manipulation and density functional theory calculations show that the formation of honeycomb network structure can be attributed to the van der Waals interactions, N–Ag–N coordination bonds, and weak C–H⋯N hydrogen bonds. Further addition of two tert-butyl groups (6tBu-TAPP) leads to a completely different assembly evolution, due to the fact that the additional tert-butyl groups affect the molecular adsorption behavior and ultimately induce desorption. This work can possibly be exploited in constructing stable and long-range ordered nanostructures in surface-assisted systems, which can also promote the development of nanostructures in functional molecular devices.

DOI: 10.1063/5.0196443

Atomically engineering metal vacancies in monolayer transition metal dichalcogenides

Atomically engineering metal vacancies in monolayer transition metal dichalcogenides

Nature Synthesis 3, 586–594 (2024).

Xiaocang Han, Mengmeng Niu, Yan Luo, Runlai Li, Jiadong Dan, Yanhui Hong, Xu Wu, Alex V. Trukhanov, Wei Ji, Yeliang Wang, Jiahuan Zhou, Jingsi Qiao*, Jin Zhang* & Xiaoxu Zhao*

Abstract:

Scanning probe microscopy and scanning transmission electron microscopy (STEM) are powerful tools to trigger atomic-scale motions, pattern atomic defects and lead to anomalous quantum phenomena in functional materials. However, these techniques have primarily manipulated surface atoms or atoms located at the beam exit plane, leaving buried atoms, which govern exotic quantum phenomena, largely unaffected. Here we propose an electron-beam-triggered chemical etching approach to engineer shielded metal atoms sandwiched between chalcogen layers in monolayer transition metal dichalcogenide (TMDC). Various metal vacancies (V_MX_n, n=0−6) have been fabricated via atomically focused electron beam in STEM. The parent TMDC surface was modified with surfactants, facilitating the ejection of sandwiched metal vacancies via charge transfer effect. In situ sequential STEM imaging corroborated that a combined chemical-induced knock-on effect and chalcogen vacancy-assisted metal diffusion process result in atom-by-atom vacancy formation. This approach is validated in 16 different TMDCs. The presence of metal vacancies strongly modified their magnetic and electronic properties, correlated with the unpaired chalcogen p and metal d electrons surrounding vacancies and adjacent distortions. These findings show a generic approach for engineering interior metal atoms with atomic precision, creating opportunities to exploit quantum phenomena at the atomic scale.

DOI:10.1038/s44160-024-00501-z

TOC Figure

Conversion of chirality to twisting via sequential one-dimensional and two-dimensional growth of graphene spirals

Conversion of chirality to twisting via sequential one-dimensional and two-dimensional growth of graphene spirals

Nature Materials 23, 331–338 (2024).

Zhu-Jun Wang#,*, Xiao Kong#, Yuan Huang#, Jun Li#, Lihong Bao, Kecheng Cao, Yuxiong Hu, Jun Cai, Lifen Wang, Hui Chen, Yueshen Wu, Yiwen Zhang, Fei Pang, Zhihai Cheng, Petr Babor, Miroslav Kolibal, Zhongkai Liu, Yulin Chen, Qiang Zhang, Yi Cui, Kaihui Liu, Haitao Yang, Xinhe Bao, Hong-Jun Gao, Zhi Liu, Wei Ji*, Feng Ding* & Marc-Georg Willinger*

Abstract:

The properties of two-dimensional (2D) van der Waals materials can be tuned through nanostructuring or controlled layer stacking, where interlayer hybridization induces exotic electronic states and transport phenomena. Here we describe a viable approach and underlying mechanism for the assisted self-assembly of twisted layer graphene. The process, which can be implemented in standard chemical vapour deposition growth, is best described by analogy to origami and kirigami with paper. It involves the controlled induction of wrinkle formation in single-layer graphene with subsequent wrinkle folding, tearing and re-growth. Inherent to the process is the formation of intertwined graphene spirals and conversion of the chiral angle of 1D wrinkles into a 2D twist angle of a 3D superlattice. The approach can be extended to other foldable 2D materials and facilitates the production of miniaturized electronic components, including capacitors, resistors, inductors and superconductors.

DOI: 10.1038/s41563-023-01632-y

Also See: News & Views – A double-helix dislocation in graphene | Nature Materials
Also See: Focus – Constructing 2D moiré and chiral materials | Nature Materials

万翰升获中学生英才计划国家级年度优秀学生称号

万翰升获中学生英才计划国家级年度优秀学生称号

2023年12月,喜讯传来,经过一年的勤奋学习和刻苦钻研,季威研究组指导的中学生万翰升在英才计划中脱颖而出,在2023年度英才计划评议中获得全国优秀的殊荣。这一荣誉是对万翰升同学才华和努力的肯定,也是对季威研究组工作的鼓舞。

万翰升同学自加入英才计划以来,便以饱满的热情投入到科学研究中。万翰升同学曾经参与研究宏观体系的力学性质,对材料力学性质有浓厚兴趣。而季威研究组的研究方向包含理论预测材料的力学性质等新奇物性,同时低维材料中具有负泊松比的材料预测与搜索是当前科学研究的前沿方向。因此在季威研究组的精心指导下,他选定了一个富有挑战性的课题,即应用计算机模拟计算低维材料泊松比。

在研究过程中,季威研究组为万翰升同学提供了全面而专业的指导。他们通过线下讨论和线上交流相结合的方式,帮助万翰升同学逐步深入课题研究,解决研究过程中遇到的问题,共同探讨下一步的研究计划。为了激发万翰升同学对物理前沿研究的兴趣,研究组向他介绍了当前物理领域的最新进展和研究方向,并分享了本研究组近期的研究成果。这种亲身参与和分享的方式让万翰升同学更加直观地感受到了科研的魅力和价值。在计算研究方面,季威研究组指导万翰升同学利用中国人民大学物理系的超级计算机集群进行计算模拟,针对39种材料进行了深入研究,成功计算出了每种材料的泊松比,筛选出负泊松比材料和近零泊松比材料。
基于上述研究成果,在中国科协、教育部共同组织的中学生科技创新后备人才培养计划(中学生英才计划)的2023年全国评选中,万翰生同学被评为年度优秀学生。我们对万翰升同学的优异成绩表示衷心祝贺。同时,研究组也表示将继续致力于为更多有志于投身科研事业的年轻人提供支持和指导。

万翰生同学学习第一性原理计算的输入文件。

万翰生同学获得中学生英才计划2023年度国家级优秀学生称号