Yating Li, Mengmeng Niu, Junpeng Zeng, Quan Zhou, Xu Wu, Wei Ji, Yeliang Wang, Ren Zhu, Jingsi Qiao, Jianbin Xu, Yi Shi, Xinran Wang, and Daowei He
Abstract:
An in-depth understanding of the electronic structure of 2H-MoTe2 at the atomic layer limit is a crucial step towards its exploitation in nanoscale devices. Here, we show that millimeter-sized monolayer (ML) MoTe2 samples, as well as smaller sized bilayer (BL) samples, can be obtained using the mechanical exfoliation technique. The electronic structure of these materials is investigated by Angle-Resolved Photoemission Spectroscopy (ARPES) for the first time and Density Functional Theory (DFT) calculations. The comparison between experiments and theory allows us to describe ML MoTe2 as a semiconductor with direct gap at K point. This scenario is reinforced by the experimental observation of the conduction band minimum at K in Rb-doped ML MoTe2, resulting in a gap of at least 0.924 eV. In the BL MoTe2 system the maxima of the bands at Γ and K display very similar energies, thus leaving the door open to a direct gap scenario, in analogy to WSe2. The monotonic increase in the separation between spin-split bands at K while moving from ML to BL and bulk-like MoTe2 is attributed to interlayer coupling. Our findings can be considered as a reference to understand Quantum Anomalous and Fractional Quantum Anomalous Hall Effects recently discovered in ML and BL MoTe2 based moir´ e heterostructures. Organic semiconductors are highly promising as channel materials for energy-efficient, cost-effective, and flexible electronics. However, grain boundaries (GBs) can cause significant device performance variation, posing a major challenge for the development of high-performance organic circuits. In this work, we effectively passivated GB-induced traps in monolayer organic thin-film transistors (OTFTs) via p-type doping with the organic salt TrTPFB. The doping strategy broadens the mobility edge, effectively shielding GB-induced energy barriers and Coulomb scattering, and promotes deeper nonlocalized hybridization states for conduction. Consequently, the charge transport mechanism transitions from multiple trapping and release (MTR) to a more band-like behavior, even when GBs are present within the device channel. The doped OTFTs demonstrate ultralow mobility variation (1.4%) and threshold voltage variation (4.9%), as well as record-low contact resistant of RC = 0.6 Ω·cm, outperforming most single-crystal technologies. These performance metrics render doped monolayer polycrystalline films highly promising candidates for industrial-scale organic electronics.
Zemin Pan#, Wenqi Xiong#, Jiaqi Dai#, Hui Zhang#, Yunhua Wang, Tao Jian, Xingxia Cui, Jinghao Deng, Xiaoyu Lin, Zhengbo Cheng, Yusong Bai, Chao Zhu, Da Huo, Geng Li, Min Feng, Jun He, Wei Ji*, Shengjun Yuan*, Fengcheng Wu*, Chendong Zhang*, and Hong-Jun Gao
Abstract:
Although the kagome model is fundamentally two-dimensional, the essential kagome physics, i.e., the kagome-bands-driven emergent electronic states, has yet to be explored in the monolayer limit. Here, we present the experimental realization of kagome physics in monolayer Mo33Te56, showcasing both ferromagnetic ordering and a correlated insulating state with an energy gap of up to 15 meV. Using a combination of scanning tunnelling microscopy and theoretical calculations, we find a structural phase of the monolayer Mo-Te compound, which forms a mirror-twin boundary loop superlattice exhibiting kagome geometry and multiple sets of kagome bands. The partial occupancy of these nearly flat bands results in Fermi surface instability, counteracted by the emergence of ferromagnetic order (with a coercive field ~0.1 T, as observed by spin-polarized STM) and the opening of a correlated hard gap. Our work establishes a robust framework featuring well-defined atomic and band structures, alongside the intrinsic two-dimensional nature, essential for the rigorous examination of kagome physics.
Wenjuan Zhao#, Xieyu Zhou#, Dayu Yan#, Yuan Huang*, Cong Li, Qiang Gao, Paolo Moras, Polina M. Sheverdyaeva, Hongtao Rong, Yongqing Cai, Eike F. Schwier, Xixia Zhang, Cheng Shen, Yang Wang, Yu Xu, Wei Ji, Chen Liu, Youguo Shi, Lin Zhao, Lihong Bao, Qingyan Wang, Kenya Shimada, Xutang Tao, Guangyu Zhang, Hongjun Gao, Zuyan Xu, Xingjiang Zhou*, Guodong Liu*
Abstract:
An in-depth understanding of the electronic structure of 2H-MoTe2 at the atomic layer limit is a crucial step towards its exploitation in nanoscale devices. Here, we show that millimeter-sized monolayer (ML) MoTe2 samples, as well as smaller sized bilayer (BL) samples, can be obtained using the mechanical exfoliation technique. The electronic structure of these materials is investigated by Angle-Resolved Photoemission Spectroscopy (ARPES) for the first time and Density Functional Theory (DFT) calculations. The comparison between experiments and theory allows us to describe ML MoTe2 as a semiconductor with direct gap at K point. This scenario is reinforced by the experimental observation of the conduction band minimum at K in Rb-doped ML MoTe2, resulting in a gap of at least 0.924 eV. In the BL MoTe2 system the maxima of the bands at Γ and K display very similar energies, thus leaving the door open to a direct gap scenario, in analogy to WSe2. The monotonic increase in the separation between spin-split bands at K while moving from ML to BL and bulk-like MoTe2 is attributed to interlayer coupling. Our findings can be considered as a reference to understand Quantum Anomalous and Fractional Quantum Anomalous Hall Effects recently discovered in ML and BL MoTe2 based moir´ e heterostructures.
Renhong Wang (王人宏), Cong Wang (王聪)*, Ruixuan Li (李睿宣), Deping Guo (郭的坪), Jiaqi Dai (戴佳琦), Canbo Zong (宗灿波), Weihan Zhang (张伟 涵), and Wei Ji (季威)*
Abstract:
Kagome materials are known for hosting exotic quantum states, including quantum spin liquids, charge density waves, and unconventional superconductivity. The search for kagome monolayers is driven by their ability to exhibit neat and well-defined kagome bands near the Fermi level, which are more easily realized in the absence of interlayer interactions. However, this absence also destabilizes the monolayer forms of many bulk kagome materials, posing significant challenges to their discovery. In this work, we propose a strategy to address this challenge by utilizing oxygen vacancies in transition metal oxides within a “1+3” design framework. Through high-throughput computational screening of 349 candidate materials, we identified 12 thermodynamically stable kagome monolayers with diverse electronic and magnetic properties. These materials were classified into three categories based on their lattice geometry, symmetry, band gaps, and magnetic configurations. Detailed analysis of three representative monolayers revealed kagome band features near their Fermi levels, with orbital contributions varying between oxygen 2p and transition metal d states. This study demonstrates the feasibility of the “1+3” strategy, offering a promising approach to uncovering low-dimensional kagome materials and advancing the exploration of their quantum phenomena.
Quantum interference has been intensively pursued in molecular electronics to investigate and utilize coherent electron transport at the ultra-small level. An essential type of quantum interference with drastic destructive-constructive switching, known as Fano interference, has been widely reported in various kinds of nanoelectronics electronic systems, but not yet been electrostatically gating in a single-molecule device. Here, we fabricate the three-terminal single-molecule transistors based on the molecule with a long backbone and a side group to demonstrate the gate-controllable Fano interference. By applying bias and gate voltages, the two-dimensional differential conductance map shows the noncentrosymmetrical Fano patterns. Combined with the electron transport model and the first principles calculations, the resonant parameters of the Fano interference can unveil the coupling geometry of the junction and the spatial distribution of the resonant states. Our findings provide an instrumental method to induce and utilize the quantum interference behaviours at the molecular level.
