Twist-angle dependent pseudo-magnetic fields in monolayer CrCl2/graphene heterostructures

Twist-angle dependent pseudo-magnetic fields in monolayer CrCl2/graphene heterostructures

Zhengbo Cheng#, Nanshu Liu#, Jinghao Deng, Hui Zhang, Zemin Pan, Chao Zhu, Shuangzan Lu, Yusong Bai, Xiaoyu Lin, Wei Ji*, Chendong Zhang*

The generation of pseudo-magnetic fields in strained graphene leads to quantized Landau levels in the absence of an external magnetic field, providing the potential to achieve a zero-magnetic-field analogue of quantum Hall effect. Here, we report the realization of pseudo-magnetic field in epitaxial graphene by building monolayer CrCl2/graphene heterointerface. The CrCl2 crystal structure exhibits spontaneous breaking of three-fold rotational symmetry, yielding anisotropic displacement field at the interface. Using scanning tunneling spectroscopy, we have discovered a sequence of pseudo-Landau levels associated with massless Dirac fermions. A control experiment performed on CrCl2/NbSe2 interface confirms the origin as the pseudo-magnetic field in the graphene layer that strongly interacts with the CrCl2. More interestingly, the strength of the pseudo-magnetic fields can be tuned by the twist angle between the monolayer CrCl2 and graphene, with a variation of up to threefold, depending on the twist angle of 0° to 30°. This work presents a rare 2D heterojunction for exploring PMF-related physics, such as valley Hall effect, with the advantage of easy and flexible implementation.

Charge-transfer dipole low-frequency vibronic excitation at single-molecular scale

Charge-transfer dipole low-frequency vibronic excitation at single-molecular scale

Cancan Lou†, Yurou Guan†, Xingxia Cui†, Yafei Li , Xieyu Zhou, Qing Yuan, Guangqiang Mei, Chengxiang Jiao, Kai Huang, Xuefeng Hou, Limin Cao, Wei Ji*, Dino Novko, Hrvoje Petek*, Min Feng*

Scanning tunneling microscopy (STM) vibronic spectroscopy, which has provided submolecular insights into electron-vibration (vibronic) coupling, faces challenges when probing the pivotal low-frequency vibronic excitations. Because of eigenstate broadening on solid substrates, resolving low-frequency vibronic states demands strong decoupling. This work designs a type II band alignment in STM junction to achieve effective charge-transfer state decoupling. This strategy enables the successful identification of the lowest-frequency Hg(ω1) (Raman-active Hg mode) vibronic excitation within single C60 molecules, which, despite being notably pronounced in electron transport of C60 single-molecule transistors, has remained hidden at submolecular level. Our results show that the observed Hg(ω1) excitation is “anchored” to all molecules, irrespective of local geometry, challenging common understanding of structural definition of vibronic excitation governed by Franck-Condon principle. Density functional theory calculations reveal existence of molecule-substrate interfacial charge-transfer dipole, which, although overlooked previously, drives the dominant Hg(ω1) excitation. This charge-transfer dipole is not specific but must be general at interfaces, influencing vibronic coupling in charge transport.

Distance-dependent magnetization modulation induced by inter-superatomic interactions in Cr-doped Au6Te12Se8 dimers

Distance-dependent magnetization modulation induced by inter-superatomic interactions in Cr-doped Au6Te12Se8 dimers

Chin. Phys. B, DOI:10.1088/1674-1056/ad8625 (2024)

Yurou Guan (官雨柔), Nanshu Liu(刘南舒), Cong Wang(王聪), Fei Pang(庞斐), Zhihai Cheng(程志海), and Wei Ji(季威)*

Individual superatoms were assembled into more complicated nanostructures for diversify their physical properties. Magnetism of assembled superatoms remains, however, ambiguous, particularly in terms of its distance dependence. Here, we report density functional theory calculations on the distance-dependent magnetism of transition metal embedded Au6Te8Se12 (ATS) superatomic dimers. Among the four considered transition metals, which include V, Cr, Mn and Fe, the Cr-embedded Au6Te12Se8 (Cr@ATS) is identified as the most suitable for exploring the inter-superatomic distance-dependent magnetism. We thus focused on Cr@ATS superatomic dimers and found an inter-superatomic magnetization-distance oscillation where three transitions occur for magnetic ordering and/or anisotropy at different inter-superatomic distances. As the inter-superatomic distance elongates, a ferromagnetism (FM)-to-antiferromagnetic (AFM) transition and a sequential AFM-to-FM transition occur, ascribed to competitions among Pauli repulsion and kinetic-energy-gains in formed inter-superatomic Cr-Au-Au-Cr covalent bonds and Te-Te quasi-covalent bonds. For the third transition, in-plane electronic hybridization contributes to the stabilization of the AFM configuration. This work unveils two mechanisms for tuning magnetism through non-covalent interactions and provides a strategy for manipulating magnetism in superatomic assemblies.

Coexistence of ferroelectricity and antiferroelectricity in 2D van der Waals multiferroic

Coexistence of ferroelectricity and antiferroelectricity in 2D van der Waals multiferroic

Yangliu Wu, Zhaozhuo Zeng, Haipeng Lu, Xiaocang Han, Chendi Yang, Nanshu Liu, Xiaoxu Zhao, Liang Qiao, Wei Ji*, Renchao Che, Longjiang Deng*, Peng Yan* and Bo Peng*

Multiferroic materials have been intensively pursued to achieve the mutual control of electric and magnetic properties. The breakthrough progress in 2D magnets and ferroelectrics encourages the exploration of low-dimensional multiferroics, which holds the promise of understanding inscrutable magnetoelectric coupling and inventing advanced spintronic devices. However, confirming ferroelectricity with optical techniques is challenging in 2D materials, particularly in conjunction with antiferromagnetic orders in single- and few-layer multiferroics. Here, we report the discovery of 2D vdW multiferroic with out-of plane ferroelectric polarization in trilayer NiI2 device, as revealed by scanning reflective magnetic circular dichroism microscopy and ferroelectric hysteresis loops. The evolution between ferroelectric and antiferroelectric phases has been unambiguously observed. Moreover, the magnetoelectric interaction is directly probed by magnetic control of the multiferroic domain switching. This work opens up opportunities for exploring new multiferroic orders and multiferroic physics at the limit of single or few atomic layers, and for creating advanced magnetoelectronic devices.

Real-space topology-engineering of skyrmionic spin textures in a van der Waals ferromagnet Fe3GaTe2

Real-space topology-engineering of skyrmionic spin textures in a van der Waals ferromagnet Fe3GaTe2

Nano Letters, DOI:10.1021/acs.nanolett.4c04031 (2024) / arXiv:2407.16924

Shuo Mi, Jianfeng Guo, Guojing Hu, Guangcheng Wang, Songyang Li, Zizhao Gong, Shuaizhao Jin, Rui Xu, Fei Pang, Wei Ji, Weiqiang Yu, Xiaolei Wang*, Xueyun Wang*, Haitao Yang*, Zhihai Cheng*

Realizing magnetic skyrmions in two-dimensional (2D) van der Waals (vdW) ferromagnets offers unparalleled prospects for future spintronic applications. The room-temperature ferromagnet Fe3GaTe2 provides an ideal platform for tailoring these magnetic solitons. Here, skyrmions of distinct topological charges are artificially introduced and spatially engineered using magnetic force microscopy (MFM). The skyrmion lattice is realized by specific field-cooling process, and can be further controllably erased and painted via delicate manipulation of tip stray field. The skyrmion lattice with opposite topological charges (S = +1 or -1) can be tailored at the target regions to form topological skyrmion junctions (TSJs) with specific configurations. The delicate interplay of TSJs and spin-polarized device current were finally investigated via the in-situ transport measurements, alongside the topological stability of TSJs. Our results demonstrate that Fe3GaTe2 not only serves as a potential building block for room-temperature skyrmion-based spintronic devices, but also presents promising prospects for Fe3GaTe2-based heterostructures with the engineered topological spin textures.

Layer-by-layer growth of bilayer graphene single-crystals enabled by proximity catalytic activity

Layer-by-layer growth of bilayer graphene single-crystals enabled by proximity catalytic activity

NanoToday 59, 102482 (2024)

Zhihong Zhang, Linwei Zhou, Zhaoxi Chen* , Antonín Jaroš, Miroslav Kolíbal, Petr Bábor, Quanzhen Zhang, Changlin Yan, Ruixi Qiao, Qing Zhang, Teng Zhang, Wei Wei, Yi Cui, Jingsi Qiao, Liwei Liu, Lihong Bao, Haitao Yang, Zhihai Cheng, Yeliang Wang, Enge Wang, Zhi Liu, Marc Willinger, Hong-Jun Gao, Kaihui Liu*, Wei Ji*, and Zhu-Jun Wang*

Direct growth of large-area vertically stacked two-dimensional (2D) van der Waal (vdW) materials is a prerequisite for their high-end applications in integrated electronics, optoelectronics and photovoltaics. Currently, centimetre- to even metre-scale monolayers of single-crystal graphene (MLG) and hexagonal boron nitride (h-BN) have been achieved by epitaxial growth on various single-crystalline substrates. However, in principle, this success in monolayer epitaxy seems extremely difficult to be replicated to bi- or few-layer growth, as the full coverage of the first layer was believed to terminate the reactivity of those adopting catalytic metal surfaces. Here, we report an exceptional layer-by-layer chemical vapour deposition (CVD) growth of large size bi-layer graphene single-crystals, enabled by proximity catalytic activity from platinum (Pt) surfaces to the outermost graphene layers. In-situ growth and real-time surveillance experiments, under well-controlled environments, unambiguously verify that the growth does follow the layer-by-layer mode on open surfaces of MLG/Pt(111). First-principles calculations indicate that the transmittal of catalytic activity is allowed by an appreciable electronic hybridisation between graphene overlayers and Pt surfaces, enabling catalytic dissociation of hydrocarbons and subsequently direct graphitisation of their radicals on the outermost sp2 carbon surface. This proximity catalytic activity is also proven to be robust for tube-furnace CVD in fabricating single-crystalline graphene bi-, tri- and tetra-layers, as well as h-BN few-layers. Our findings offer an exceptional strategy for potential controllable, layer-by-layer and wafer-scale growth of vertically stacked few-layered 2D single crystals.