The aim of atom electronics, i.e. the final scale of electronics, is to make use of specific individual atoms as active electronic components. Here, we review recent researches on atom electronics in single-molecule transistors (SMTs) through single-atom access and manipulation. We begin by describing the basic concepts and characteristics of atom electronics in SMTs, before discussing some of the most recent examples, including atomic transistors and atomic storage. In our concluding remarks, we discuss some perspectives on fabrication, integration, and other potential atomic devices in which high precision access to, and manipulation of single atoms could be of great significance. This will affect integrated circuits, quantum computing, and other devices that will drive the electronics of the future.
Abstract: High-capacity electrochemical energy storage systems are more urgently needed than ever before with the rapid development of electric vehicles and the smart grid. The most efficient way to increase capacity is to develop electrode materials with low molecular weights. The low-cost metal halides are theoretically ideal cathode materials due to their advantages of high capacity and redox potential. However, their cubic structure and large energy barrier for deionization impede their rechargeability. Here, the reversibility of potassium halides, lithium halides, sodium halides, and zinc halides is achieved through decreasing their dimensionality by the strong π–cation interactions between metal cations and reduced graphene oxide (rGO). Especially, the energy densities of KI-, KBr-, and KCl-based materials are 722.2, 635.0, and 739.4 Wh kg−1, respectively, which are higher than those of other cathode materials for potassium-ion batteries. In addition, the full-cell with 2D KI/rGO as cathode and graphite as anode demonstrates a lifespan of over 150 cycles with a considerable capacity retention of 57.5%. The metal halides-based electrode materials possess promising application prospects and are worthy of more in-depth researches.
Grain boundaries in two-dimensional (2D) semiconductors generally induce distorted band alignment and interfacial charge, which impair their electronic properties for device applications. Here, we report the improvement of band alignment at the grain boundaries of PtSe2, a 2D semiconductor, with selective adsorption of a presentative organic acceptor, tetracyanoquinodimethane (TCNQ). TCNQ molecules show selective adsorption at the PtSe2 grain boundary with strong interfacial charge. The adsorption of TCNQ distinctly improves the band alignment at the PtSe2 grain boundaries. With the charge transfer between the grain boundary and TCNQ, the local charge is inhibited, and the band bending at the grain boundary is suppressed, as revealed by the scanning tunneling microscopy and spectroscopy (STM/S) results. Our finding provides an effective method for the advancement of the band alignment at the grain boundary by functional molecules, improving the electronic properties of 2D semiconductors for their future applications.
Abstract: Magnetic topological insulators (MTIs) have received considerable attention owing to the demonstration of various quantum phenomena, such as the quantum anomalous Hall effect and topological magnetoelectric effect. The intrinsic superlatticelike layered MTIs MnBi2Te4/(Bi2Te3)n have been extensively investigated mainly through transport measurements; however, a direct investigation of their superlattice-sensitive magnetic behaviors is relatively rare. In this paper, we report a microscopic real space investigation of the magnetic phase behaviors in MnBi4Te7 using cryogenic magnetic force microscopy. The intrinsic robust A type antiferromagnetic (AFM), surface spin-flip (SSF) + AFM, ferromagnetic (FM) + SSF + AFM, and forced FM phases are sequentially visualized via the increased external magnetic field, consistent with the magnetic behavior in the M-H curve. The temperature-dependent magnetic phase evolution behaviors are further investigated to obtain a complete H-T phase diagram of MnBi4Te7. Tentative local phase manipulation via the stray field of the magnetic tip is demonstrated by transforming the AFM into the FM phase in the surface layers of MnBi4Te7. Our study provides key real-space ingredients for understanding the complicated magnetic, electronic, and topological properties of such intrinsic MTIs and suggests new directions for manipulating spin textures and locally controlling their exotic properties.
