Robust Mottness and tunable interlayer magnetism in Nb3X8 (X = F, Cl, Br, I) bilayers

Robust Mottness and tunable interlayer magnetism in Nb3X8 (X = F, Cl, Br, I) bilayers

Zhongqin Zhang, Jiaqi Dai, Cong Wang*, Zhihai Cheng, and Wei Ji*

Kagome materials have attracted extensive attention due to their correlated properties. The breathing kagome material system Nb3F8, Nb3Cl8, Nb3Br8, Nb3I8 is regarded as a Mott insulator. However, studies on the influence of interlayer coupling on its magnetic and Mott properties are lacking. In this work, we investigated the effect of interlayer coupling on bilayer properties of each Nb3X8 (X = F, Cl, Br, I) compound via density functional theory (DFT) calculations, considering 24 stacking configurations per material. We found that each bilayer material is a Mott insulator. Due to the competition between interlayer Pauli repulsion and hopping, most interlayer magnetism is AFM, a small number of cases show AFM-FM degeneracy, and the magnetic ground state of 3 configurations is interlayer FM, i.e., tunable interlayer magnetism occurs. This robustness of Mott states coexisting with tunable interlayer magnetism provide novel and comprehensive analysis and insights for the research of breathing kagome Mott insulators.

Anisotropic Etching Patterns in 2D Cr5Te8 Nanosheets and Their Arduous Saturation Magnetization

Anisotropic Etching Patterns in 2D Cr5Te8 Nanosheets and Their Arduous Saturation Magnetization

Hanxiang Wu, Zuoquan Tan, Zhaxi Suonan, Shanshan Chen, Rui Xu, Wei Ji, Zhihai Cheng, and Fei Pang*

Although 2D self-intercalated Cr5Te8 has been successfully synthesized via chemical vapor deposition (CVD), its etching behavior remains largely unexplored. Etching, as the inverse process of material growth, is essential for understanding growth mechanisms and fabricating nanosheet patterns. Herein, we explore the anisotropic etching of 2D Cr5Te8 assisted by an excess Te supply. The etching process initiates from both the surface and the edge, creating distinct holes and nanoribbons with triangular or hexagonal shapes. To the best of our knowledge, this is the first report on controllable anisotropic etching patterns in 2D Cr5Te8. Furthermore, magnetic measurements reveal ferromagnetism in the etched nanosheets with a Curie temperature (TC) of 164 K, slightly lower than that of the unetched nanosheets. The etched nanosheets exhibit an enhanced saturated magnetic field of 38.5 kOe, approximately 3.2 times that of the unetched nanosheets. This enhancement in the saturated magnetic field is attributed to the pattern-induced strengthening of the reentrant stray field. This study offers a new direction for preparing patterned 2D materials and opens a novel avenue for modulating 2D magnetism.

Mechanically and electrically switchable triferroic altermagnet in a pentagonal FeO2 monolayer

Mechanically and electrically switchable triferroic altermagnet in a pentagonal FeO2 monolayer

Deping Guo#,*, Jiaqi Dai#, Renhong Wang, Cong Wang*, and Wei Ji*

Two‑dimensional multiferroics promise low‑power, multifunctional devices, yet the intrinsic coexistence and mutual control of three coupled ferroic orders in a single layer remains elusive. Here, we identify pentagonal monolayer FeO2 as an intrinsic triferroic altermagnet where ferroelectric (FE), ferroelastic (FA), and altermagnetic (AM) orders coexist and tightly coupled, accompanied by a competing antiferroelectric (AFE) phase using first‑principles calculations. The solely presence of glide mirror Mx symmetry in a FeO2 sublayer, with the breaking of four‑fold rotation C4z symmetry, induces in‑plane vector ferroelectricity and twin‑related ferroelastic strains. Both FE and AFE phases break combined parity–time symmetry and display sizable altermagnetic spin splitting with Néel temperatures over 200 K. Electric‑field induced rotation of the FE polarization reverses the sign of the spin splitting, while in‑plane uniaxial strain triggers ferroelastic switching that simultaneously rotates the FE polarization vector by 90° and reverses the AM state. These electric‑field‑ and strain‑mediated pathways interlink six distinct polarization states that can be selected purely by electric fields and/or mechanical strain. This work extends intrinsic triferroicity to pentagonal monolayers and outlines a symmetry‑based route toward mechanically and electrically configurable altermagnetic spintronics.

Tunable altermagnetism via interchain engineering in parallel-assembled atomic chains

Tunable altermagnetism via interchain engineering in parallel-assembled atomic chains

Editors’ Suggestion

Deping Guo, Canbo Zong, Weihan Zhang, Cong Wang*, Junwei Liu*, and Wei Ji*

Altermagnetism has recently drawn considerable attention in three- and two-dimensional materials. Here we extend this concept to quasi-one-dimensional (Q1D) monolayers assembled from single-atomic magnetic chains. Through systematically examining nine types of structures, two stacking orders, intra- and interchain magnetic couplings, we identify four out of 30 promising structural prototypes for hosting altermagnetism, which yields 192 potential monolayer materials. We further confirm eight thermodynamically stable Q1D monolayers via high-throughput calculations. Using symmetry analysis and first-principles calculations, we find that the existence of altermagnetism is determined by the type of interchain magnetic coupling and predict three intrinsic altermagnets, CrBr3, VBr3, and MnBr3, due to their ferromagnetic interchain couplings and five extrinsic ones, CrF3, CrCl3, CrI3, FeCl3, and CoTe3, ascribed to their neglectable or antiferromagnetic interchain couplings. Moreover, the interchain magnetic coupling here is highly tunable by manipulating the interchain spacing, leading to experimentally feasible transitions between altermagnetic and nodal-line semiconducting states. In addition, applying external electric fields can further modulate the spin splitting. Our findings establish a highly tunable family of Q1D altermagnets, offering fundamental insights into the intricate relationship between geometry, electronic structure, and magnetism. These discoveries hold significant promises for experimental realization and future spintronic applications.

Unusual charge density wave introduced by the Janus structure in monolayer vanadium dichalcogenides

Unusual charge density wave introduced by the Janus structure in monolayer vanadium dichalcogenides

Science Advances 11,eadq4406(2025)

Ziqiang Xu#, Yan Shao#, Chun Huang#, Chao Zhu#, Genyu Hu, Shihao Hu, Zhi-Lin Li, Xiaoyu Hao, Yanhui Hou, Teng Zhang, Liwei Liu, Jin-An Shi, Chen Liu, Jia-Ou Wang, Wu Zhou, Jiadong Zhou, Wei Ji, Yeliang Wang, Chendong Zhang*, Jingsi Qiao*,Hong-Jun Gao, Xu Wu*

As a fundamental structural feature, the symmetry of materials determines the exotic quantum properties in transition metal dichalcogenides (TMDs) with charge density waves (CDWs). The Janus structure, an artificially constructed lattice, provides an opportunity to tune the electronic structures and their associated behavior, such as CDW states. However, limited by the difficulties in atomic-level fabrication and material stability, the experimental visualization of the CDW states in two-dimensional (2D) TMDs with Janus structure is still rare. Here, using surface selenization of VTe2, we fabricated monolayer Janus VTeSe. With scanning tunneling microscopy, we observed and characterized an unusual sqrt13 x sqrt13 CDW state with threefold rotational symmetry breaking. Combined with theoretical calculations, we find that this CDW state can be attributed to the magnetic-involved charge modulation in the Janus VTeSe, rather than the conventional electron-phonon coupling. Our findings provide a promising platform for studying the CDW states and artificially tuning the electronic properties of the 2D TMDs toward the related fundamental and applied studies.