六名成员参加“第四届团簇科学与原子制造学术研讨会”

六名成员参加“第四届团簇科学与原子制造学术研讨会”

2023年4月21-23日,中国人民大学物理学院季威教授携刘南舒博士后以及郭的坪、伍琳璐、官雨柔、戴佳琦等四名博士生赴西安参加了第四届“团簇科学与原子制造学术研讨会”。季威教授受会议主办方邀请作了题为“低维超原子晶体中的特殊电子态”的报告。

季威教授在作报告

刘南舒、郭的坪、伍琳璐、官雨柔、戴佳琦等成员分别在会议中展示了题为 “Magnetic coupling in superatom Mn@Sn12 assembly” (Liu), “Controllable dimensionality conversion between 1D and 2D CrCl3 magnetic nanostructures” (Guo), “Interweaving Polar Charge Orders in a Layered Metallic Superatomic Crystal” (Wu), “Magnetization-distance oscillation induced by competing interactions in Cr doped Au6Te12Se8 superatomic assembly” (Guan) 和“One-Step Exfoliation Method for Plasmonic Activation of Large-Area 2D Crystals” (Dai) 的墙报,均获得会议主办方颁发的优秀墙报奖状。

(左图)不愿透露样貌的郭师姐和她的墙报;(右图)伍琳璐和戴佳琦在她们的墙报前合影

第四届“团簇科学与原子制造学术研讨会”由西安交通大学物理学院物质非平衡合成与调控教育部重点实验室、南京大学物理学院和大连理工大学三束材料改性教育部重点实验室联合主办;西安交通大学激光与粒子束科学技术研究所承办。会议主题是交流近年来原子与分子及团簇物理、原子制造和纳米科技方面的研究进展,探讨本领域的未来发展方向。季威研究组成员为参与本次会议做了充分准备,并期待下次参会的科研成果能有在团簇及原子制造领域有新的突破。

Unveiling Electronic Behaviors in Heterochiral Charge-Density-Wave Twisted Stacking Materials with 1.25 nm Unit Dependence

Unveiling Electronic Behaviors in Heterochiral Charge-Density-Wave Twisted Stacking Materials with 1.25 nm Unit Dependence

ACS NANO 17, 2702 (2023)

Liwei Liu* Xuan Song Jiaqi Dai Han Yang Yaoyao Chen Xinyu Huang Zeping Huang Hongyan Ji Yu Zhang Xu Wu Jia-Tao Sun Quanzhen Zhang Jiadong Zhou Yuan Huang Jingsi Qiao* Wei Ji Hong-Jun Gao Yeliang Wang*

Layered charge-density-wave (CDW) materials have gained increasing interest due to their CDW stacking-dependent electronic properties for practical applications. Among the large family of CDW materials, those with star of David (SOD) patterns are very important due to the potentials for quantum spin liquid and related device applications. However, the spatial extension and the spin coupling information down to the nanoscale remain elusive. Here, we report the study of heterochiral CDW stackings in bilayer (BL) NbSe2 with high spatial resolution. We reveal that there exist well-defined heterochiral stackings, which have inhomogeneous electronic states among neighboring CDW units (star of David, SOD), significantly different from the homogeneous electronic states in the homochiral stackings. Intriguingly, the different electronic behaviors are spatially localized within each SOD with a unit size of 1.25 nm, and the gap sizes are determined by the different types of SOD stackings. Density functional theory (DFT) calculations match the experimental measurements well and reveal the SOD-stacking-dependent correlated electronic states and antiferromagnetic/ferromagnetic couplings. Our findings give a deep understanding of the spatial distribution of interlayer stacking and the delicate modulation of the spintronic states, which is very helpful for CDW-based nanoelectronic devices.

DOI: 10.1021/acsnano.2c10841

One-Step Exfoliation Method for Plasmonic Activation of Large-Area 2D Crystals

One-Step Exfoliation Method for Plasmonic Activation of Large-Area 2D Crystals

Advanced Science 2022, DOI: 10.1002/advs.202204247

Qiang Fu#, Jia-Qi Dai#, Xin-Yu Huang#, Yun-Yun Dai, Yu-Hao Pan, Long-Long Yang, Zhen-Yu Sun, Tai-Min Miao, Meng-Fan Zhou, Lin Zhao, Wei-Jie Zhao, Xu Han, Jun-Peng Lu, Hong-Jun Gao, Xing-Jiang Zhou, Ye-Liang Wang*, Zhen-Hua Ni*, Wei Ji*, Yuan Huang*

Advanced exfoliation techniques are crucial for exploring the intrinsic properties and applications of 2D materials. Though the recently discovered Au-enhanced exfoliation technique provides an effective strategy for the preparation of large-scale 2D crystals, the high cost of gold hinders this method from being widely adopted in industrial applications. In addition, direct Au contact could significantly quench photoluminescence (PL) emission in 2D semiconductors. It is therefore crucial to find alternative metals that can replace gold to achieve efficient exfoliation of 2D materials. Here, the authors present a one-step Ag-assisted method that can efficiently exfoliate many large-area 2D monolayers, where the yield ratio is comparable to Au-enhanced exfoliation method. Differing from Au film, however, the surface roughness of as-prepared Ag films on SiO2/Si substrate is much higher, which facilitates the generation of surface plasmons resulting from the nanostructures formed on the rough Ag surface. More interestingly, the strong coupling between 2D semiconductor crystals (e.g., MoS2, MoSe2) and Ag film leads to a unique PL enhancement that has not been observed in other mechanical exfoliation techniques, which can be mainly attributed to enhanced light-matter interaction as a result of extended propagation of surface plasmonic polariton (SPP). This work provides a lower-cost and universal Ag-assisted exfoliation method, while at the same time offering enhanced SPP-matter interactions. DOI:10.1002/advs.202204247