The fabrication of one-dimensional (1D) magnetic systems on solid surfaces, although of high fundamental interest, has yet to be achieved for a crossover between two-dimensional (2D) magnetic layers and their associated 1D spin chain systems. In this study, we report the fabrication of 1D single-unit-cellwidth CrCl3 atomic wires and their stacked few-wire arrays on the surface of a van der Waals (vdW) superconductor NbSe2. Scanning tunneling microscopy/spectroscopy and first-principles calculations jointly revealed that the single wire shows an antiferromagnetic large-bandgap semiconducting state in an unexplored structure different from the well-known 2D CrCl3 phase. Competition among the total energies and nanostructure-substrate interfacial interactions of these two phases result in the appearance of the 1D phase. This phase was transformable to the 2D phase either prior to or after the growth for in situ or ex situ manipulations, in which the electronic interactions at the vdW interface play a nontrivial role that could regulate the dimensionality conversion and structural transformation between the 1D-2D CrCl3 phases.
After the preparation of 2D electronic flat band (EFB) in van der Waals (vdW) superlattices, recent measurements suggest the existence of 1D electronic flat bands (1D-EFBs) in twisted vdW bilayers. However, the realization of 1D-EFBs is experimentally elusive in untwisted 2D layers, which is desired considering their fabrication and scalability. Herein, the discovery of 1D-EFBs is reported in an untwisted in situ-grown two atomic-layer Bi(110)superlattice self-aligned on an SnSe(001) substrate using scanning probe microscopy measurements and density functional theory calculations. While the Bi-Bi dimers of Bi zigzag (ZZ) chains are buckled, the epitaxial lattice mismatch between the Bi and SnSe layers induces two 1D buckling reversal regions (BRRs) extending along the ZZ direction in each Bi(110)-11 x 17 supercell. A series of 1D-EFBs arises spatially following BRRs that isolate electronic states along the armchair (AC) direction and localize electrons in 1D extended states along ZZ due to quantum interference at a topological node. This work provides a generalized strategy for engineering 1D-EFBs in utilizing lattice mismatch between untwisted rectangular vdW layers.
Deping Guo#, Pengjie Guo#, Shijing Tan, Min Feng, Limin Cao, Zheng-Xin Liu*, Kai Liu*,
Zhong-Yi Lu, Wei Ji*
Abstract
Dirac nodal-line semimetals (DNLSMs) host novel quasiparticle excitations and intriguing transport properties, which are, however, easily perturbed under strong spin-orbit coupling (SOC), especially in low-dimensions. Two-dimensional (2D) layers have numerous advantages and are under continuous development; however, 2D-DNLSMs resistant to SOC are yet to be discovered. Here, we report the C_2v×Z_2^T little co-group, a non-symmorphic symmetry we found in 2D, guarantees a robust 2D-DNLSM against SOC, which could be imposed in three-atomic-layer (3-AL) Bismuth (the brick phase, a novel Bi allotrope) and other layered materials. Intriguingly, (4n+2) valence electrons fill the electronic bands in 3-AL Bi, such that the nodal line passes the Fermi level where other low-energy states are gapped, allowing feasible observation of DNLSM-induced phenomena without interference from other bands in future transport measurements. Thus, our study demonstrates an unprecedented category of layered materials, allowing for the exploration of nearly isolated DNL states in 2D.
Zheng, Fangyuan; Guo, Deping; Huang, Lingli; Wong, Lok Wing; Chen, Xin; Wang, Cong; Cai, Yuan; Wang, Ning; Lee, Chun-Sing; Lau, Shu Ping; Ly, Thuc Hue; Ji, Wei and Zhao, Jiong
Abstract
Phase patterning in polymorphic two-dimensional (2D) materials offers diverse properties that extend beyond what their pristine structures can achieve. If precisely controllable, phase transitions can bring exciting new applications for nanometer-scale devices and ultra-large-scale integrations. Here, the focused electron beam is capable of triggering the phase transition from the semiconducting T” phase to metallic T’ and T phases in 2D rhenium disulfide (ReS2) and rhenium diselenide (ReSe2) monolayers, rendering ultra-precise phase patterning technique even in sub-nanometer scale is found. Based on knock-on effects and strain analysis, the phase transition mechanism on the created atomic vacancies and the introduced substantial in-plane compressive strain in 2D layers are clarified. This in situ high-resolution scanning transmission electron microscopy (STEM) and in situ electrical characterizations agree well with the density functional theory (DFT) calculation results for the atomic structures, electronic properties, and phase transition mechanisms. Grain boundary engineering and electrical contact engineering in 2D are thus developed based on this patterning technique. The patterning method exhibits great potential in ultra-precise electron beam lithography as a scalable top-down manufacturing method for future atomic-scale devices. DOI:10.1002/advs.202200702
