Yueshen Wu, Yuxiong Hu, Cong Wang, Xiang Zhou, Xiaofei Hou, Wei Xia, Yiwen Zhang, Jinghui Wang, Yifan Ding, Jiadian He, Peng Dong, Song Bao, Jinsheng Wen, Yanfeng Guo, Kenji Watanabe, Takashi Taniguchi, Wei Ji, Zhu-Jun Wang, Jun Li
Abstract:
Fe3GeTe2 have proven to be of greatly intrigue. However, the underlying mechanism behind the varying Curie temperature (Tc) values remains a puzzle. Here, we explored the atomic structure of Fe3GeTe2 crystals exhibiting Tc values of 160, 210, and 230 K. The elemental mapping reveals a Fe-intercalation on the interstitial sites within the van der Waals gap of the high- Tc (210 and 230 K) samples, which are observed an exchange bias effect by electrical transport measurements, while Fe intercalation or the bias effect is absent in the low-Tc (160 K) samples. First-principles calculations further suggest that the Fe-intercalation layer may be responsible for the local antiferromagnetic coupling that gives rise to the exchange bias effect, and that the interlayer exchange paths greatly contributes to the enhancement of Tc. This discovery of the Fe-intercalation layer elucidates the mechanism behind the hidden antiferromagnetic ordering that underlies the enhancement of Tc in Fe3GeTe2.
After the preparation of 2D electronic flat band (EFB) in van der Waals (vdW) superlattices, recent measurements suggest the existence of 1D electronic flat bands (1D-EFBs) in twisted vdW bilayers. However, the realization of 1D-EFBs is experimentally elusive in untwisted 2D layers, which is desired considering their fabrication and scalability. Herein, the discovery of 1D-EFBs is reported in an untwisted in situ-grown two atomic-layer Bi(110)superlattice self-aligned on an SnSe(001) substrate using scanning probe microscopy measurements and density functional theory calculations. While the Bi-Bi dimers of Bi zigzag (ZZ) chains are buckled, the epitaxial lattice mismatch between the Bi and SnSe layers induces two 1D buckling reversal regions (BRRs) extending along the ZZ direction in each Bi(110)-11 x 17 supercell. A series of 1D-EFBs arises spatially following BRRs that isolate electronic states along the armchair (AC) direction and localize electrons in 1D extended states along ZZ due to quantum interference at a topological node. This work provides a generalized strategy for engineering 1D-EFBs in utilizing lattice mismatch between untwisted rectangular vdW layers.
Ping Chen, Jinbo Pan, Wenchao Gao, Bensong Wan, Xianghua Kong, Yang Cheng, Kaihui Liu, Shixuan Du, Wei Ji, Caofeng Pan & Zhong Lin Wang
Abstract
Transition metal dichalcogenides (TMDCs) with 2H phase are expected to be building blocks in next-generation electronics; however, they suffer from electrical anisotropy, which is the basics for multi-terminal artificial synaptic devices, digital inverters, and anisotropic memtransistors, which are highly desired in neuromorphic computing. Herein, the anisotropic carrier mobility from 2H WSe2 is reported, where the anisotropic degree of carrier mobility spans from 0.16 to 0.95 for various WSe2 field-effect transistors under a gate voltage of −60 V. Phonon scattering, impurity ions scattering, and defect scattering are excluded for anisotropic mobility. An intrinsic screening layer is proposed and confirmed by Z-contrast scanning transmission electron microscopy (STEM) imaging to respond to the electrical anisotropy. Seven types of intrinsic screening layers are created and calculated by density functional theory to evaluate the modulated electronic structures, effective masses, and scattering intensities, resulting in anisotropic mobility. The discovery of anisotropic carrier mobility from 2H WSe2 provides a degree of freedom for adjusting the physical properties of 2H TMDCs and fertile ground for exploring and integrating TMDC electronic transistors with better performance along the direction of high mobility.
