Chen Ye, Cong Wang, Qiong Wu, Sheng Liu, Jiayuan Zhou, Guopeng Wang, Aljoscha Söll, Zdenek Sofer, Ming Yue, Xue Liu, Mingliang Tian, Qihua Xiong, Wei Ji & Xiao Renshaw Wang
Abstract
Magnetic van der Waals (vdW) materials possess versatile spin configurations stabilized in reduced dimensions. One magnetic order is the interlayer antiferromagnetism in A-type vdW antiferromagnet, which may be effectively modified by the magnetic field, stacking order, and thickness scaling. However, atomically revealing the interlayer spin orientation in the vdW antiferromagnet is highly challenging, because most of the material candidates exhibit an insulating ground state or instability in ambient conditions. Here, we report the layer-dependent interlayer antiferromagnetic spin reorientation in air-stable semiconductor CrSBr using magnetotransport characterization and first-principles calculations. We reveal an odd–even layer effect of interlayer spin reorientation, which originates from the competitions among interlayer exchange, magnetic anisotropy energy, and extra Zeeman energy of uncompensated magnetization. Furthermore, we quantitatively constructed the layer-dependent magnetic phase diagram with the help of a linear-chain model. Our work uncovers the layer-dependent interlayer antiferromagnetic spin reorientation engineered by magnetic field in the air-stable semiconductor. (DOI: 10.1021/acsnano.2c01151)
Rui Xu, Yingzhuo Lun, Lan Meng, Fei Pang, Yuhao Pan, Zhiyue Zheng, Le Lei, Sabir Hussain, Yanjun Li, Yasuhiro Sugawara, Jiawang Hong, Wei Ji & Zhihai Cheng*
Abstract
Strain engineering plays a crucial role in controlling the physical properties of two-dimensional (2D) materials. However, the mechanical behavior of stressed 2D crystals has not been fully understood. In this study, the fracture behavior and accompanying properties of a strained single-crystal monolayer WS2 of submicron scale were investigated using a theoretical–experimental joint study. After thermal strain, the WS2 monolayer was split into different forms by several cracks, with the cause of the crack formation being studied using finite element analysis (FEA). The cracks were initiated from the vertex of the nucleation center, extending along the stronger von Mises stress isolines and terminating at the edges of the monolayers. Within the separate sections, ripple regions were observed, forming several typical nanopatterns. The band gap, frictional, viscosity, and elasticity characteristics of the different strain regions were also investigated. The nanopattern should enable flexibility in the design of more sophisticated devices based on 2D materials.
Yutian Yang, Yingying Wang, Jingsi Qiao, Weiwei Zhao, Yuanfang Yu, Shaopeng Feng, Xuhong An, Jialin Zhang, Wei Ji, Xinran Wang, Junpeng Lu & Zhenhua Ni
Abstract
The functionality of 2D molecular crystal-based devices crucially depends on their intrinsic properties, such as molecular energy levels, light absorption efficiency, and dielectric permittivity, which are highly sensitive to molecular aggregation. Here, it is demonstrated that the dielectric permittivity of the 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) molecular crystals on monolayer WS2 substrates can be tuned from 4.62 in the wetting layer to 2.25 in the second layer. Its origin lies in the different molecular orientations in the wetting layer (lying-down) and in the subsequently stacked layers (standing-up), which lead to a positive Coulomb coupling (JCoup) value (H-aggregation) and a negative JCoup value (J-aggregation), respectively. Polarized optical contrast spectroscopy reveals that the permittivity of C8-BTBT is anisotropic, and its direction is related to the underlying substrate. The study offers guidelines for future manipulation of the permittivity of 2D molecular crystals, which may promote their applications toward various electronic and optoelectronic devices.
Quantum confinement has remarkable effects on the band structures and optoelectronic performance of semiconducting materials. The confinement of electronic states developed along van der Waals (vdW) gaps in transition metal dichalcogenides (TMDs) has unique advantages compared with those of artificial quantum wells. Here, we detected the quantized electronic states of few-layered MoS2 in real space using scanning tunneling microscope/spectroscopy. Combined with density-functional theory calculations, the quantized states were attributed to quantum-well states (QWSs), and the number of the states was strictly determined by the MoS2 layer thickness. We further regulated the QWSs of few-layered MoS2 by tuning the strength of interlayer hybridization through directly adjusting the interlayer distance. More importantly, substitutional defects in few-layered MoS2 were introduced to control the energy eigenvalues of the QWSs. Our work proves the existence of the interlayer electronic hybridization in conventional weakly coupled vdW interfaces, and provides a way to manipulate the electronic states of few-layered TMD through controlling interlayer hybridization. It also suggests potential applications of quantum-well materials in subband transitions, spin splitting, photoexcitation, and electronic devices.
Zijing Zhao, Jian Zhou, Luhao Liu, Nanshu Liu, Jianqi Huang, Biao Zhang, Wei Li, Yi Zeng, Teng Zhang, Wei Ji, Teng Yang, Zhidong Zhang, Songlin Li & Yanglong Hou
Abstract
Two-dimensional (2D) magnetic materials have attracted significant attention for promising applications in energy-saving logic and robust memory devices. However, most 2D magnets discovered so far typically feature drawbacks for practical applications due to low critical temperatures. Herein, we synthesize ultrathin room-temperature (RT) magnetic Fe7Se8 nanoflakes via the space-confined chemical vapor deposition method. It is found that the appropriate supply and control of Se concentration in the reaction chamber is crucial for synthesizing high-quality nonstoichiometric Fe7Se8 nanoflakes. Cryogenic electrical and magnetic characterizations reveal the emergence of spin reorientation at ∼130 K and the survival of long-range magnetic ordering up to room temperature. The RT magnetic domain structures with different thicknesses are also uncovered by magnetic force microscopy. Moreover, theoretical calculations confirm the spin configuration and metallic band structure. The outstanding characteristics exhibited by Fe7Se8 nanoflakes, including RT magnetism, spin reorientation property, and good electrical conductivity, make them a potential candidate for RT spintronics.
