Unconventional compensated bipolarized magnetic semiconductor

Unconventional compensated bipolarized magnetic semiconductor

Peng-Jie Guo, Xiao-Yao Hou, Ze-Feng Gao, Huan-Cheng Yang, Wei Ji, Zhong-Yi Lu

Altermagnetic materials, with real-space antiferromagnetic arrangement and reciprocal-space anisotropic spin splitting, have attracted much attention. However, the spin splitting is small in most altermagnetic materials, which is a disadvantage to their application in electronic devices. In this study, based on symmetry analysis and the first-principles electronic structure calculations, we predict for the first time two Luttinger compensated bipolarized magnetic semiconductors Mn(CN)2 and Co(CN)2 with isotropic spin splitting as in the ferromagnetic materials. Our further analysis shows that the Luttinger compensated magnetism here depends not only on spin group symmetry, but also on the crystal field splitting and the number of d-orbital electrons. In addition, the polarized charge density indicates that both Mn(CN)2 and Co(CN)2 have the quasi-symmetry T{\tau} , resulting from the crystal field splitting and the number of d-orbital electrons. The Luttinger compensated magnetism not only has the zero total magnetic moment as the antiferromagnetism, but also has the isotropic spin splitting as the ferromagnetism, thus our work not only provides theoretical guidance for searching Luttinger compensated magnetic materials with distinctive properties, but also provides a material basis for the application in spintronic devices.

Mechanically and electrically switchable triferroic altermagnet in a pentagonal FeO2 monolayer

Mechanically and electrically switchable triferroic altermagnet in a pentagonal FeO2 monolayer

Deping Guo#,*, Jiaqi Dai#, Renhong Wang, Cong Wang*, and Wei Ji*

Two‑dimensional multiferroics promise low‑power, multifunctional devices, yet the intrinsic coexistence and mutual control of three coupled ferroic orders in a single layer remains elusive. Here, we identify pentagonal monolayer FeO2 as an intrinsic triferroic altermagnet where ferroelectric (FE), ferroelastic (FA), and altermagnetic (AM) orders coexist and tightly coupled, accompanied by a competing antiferroelectric (AFE) phase using first‑principles calculations. The solely presence of glide mirror Mx symmetry in a FeO2 sublayer, with the breaking of four‑fold rotation C4z symmetry, induces in‑plane vector ferroelectricity and twin‑related ferroelastic strains. Both FE and AFE phases break combined parity–time symmetry and display sizable altermagnetic spin splitting with Néel temperatures over 200 K. Electric‑field induced rotation of the FE polarization reverses the sign of the spin splitting, while in‑plane uniaxial strain triggers ferroelastic switching that simultaneously rotates the FE polarization vector by 90° and reverses the AM state. These electric‑field‑ and strain‑mediated pathways interlink six distinct polarization states that can be selected purely by electric fields and/or mechanical strain. This work extends intrinsic triferroicity to pentagonal monolayers and outlines a symmetry‑based route toward mechanically and electrically configurable altermagnetic spintronics.

Atomic to mesoscale hierarchical structures and magnetic states in an anisotropic layered ferromagnet FePd2Te2

Atomic to mesoscale hierarchical structures and magnetic states in an anisotropic layered ferromagnet FePd2Te2

Shuo Mi#, Manyu Wang#, Bingxian Shi#, Songyang Li, Xiaoxiao Pei, Yanyan Geng, Shumin Meng, Rui Xu, Li Huang, Wei Ji, Fei Pang, Peng Cheng*, Jianfeng Guo*, and Zhihai Cheng*

Strain engineering offers a compelling route to modulate magnetism in two-dimensional (2D) materials, yet most approaches rely on externally applied strain. An in-plane anisotropic 2D-layered ferromagnet FePd2Te2 provides a suitable platform to study intrinsic strain-magnetism coupling due to its twinning domains. Here, we report spatially modulated internal compressive/tensile(C/T) strain regions in FePd2Te2 and their strong impact on local magnetic properties in real space by using atomic/magnetic force microscopy (AFM/MFM) combined with scanning tunneling microscopy (STM). Field- and strain-dependent spin transformations reveal the modulation of its intrinsic C/T regions. Notably, C regions retain intact Fe zigzag chains and exhibit larger, abruptly switching magnetic moments, while T regions display fragmented chains with reduced, gradually rotating spins. The intrinsic strain-induced intact ferromagnetic (FM), field-induced polarized-FM states, and their transitions are comparatively discussed during magnetic measurements. Temperature- and field-dependent evolution are further investigated in the FM and paramagnetic (PM) states and summarized to obtain an H-T phase diagram of FePd2Te2. Our work provides key results for understanding real-space tunable magnetic states through internal structural heterogeneity and suggests potential strategies for manipulating intrinsic strain-engineered magnetic devices.

Robust Mottness and tunable interlayer magnetism in Nb3X8 (X = F, Cl, Br, I) bilayers

Robust Mottness and tunable interlayer magnetism in Nb3X8 (X = F, Cl, Br, I) bilayers

Zhongqin Zhang, Jiaqi Dai, Cong Wang*, Zhihai Cheng, and Wei Ji*

Kagome materials have attracted extensive attention due to their correlated properties. The breathing kagome material system Nb3F8, Nb3Cl8, Nb3Br8, Nb3I8 is regarded as a Mott insulator. However, studies on the influence of interlayer coupling on its magnetic and Mott properties are lacking. In this work, we investigated the effect of interlayer coupling on bilayer properties of each Nb3X8 (X = F, Cl, Br, I) compound via density functional theory (DFT) calculations, considering 24 stacking configurations per material. We found that each bilayer material is a Mott insulator. Due to the competition between interlayer Pauli repulsion and hopping, most interlayer magnetism is AFM, a small number of cases show AFM-FM degeneracy, and the magnetic ground state of 3 configurations is interlayer FM, i.e., tunable interlayer magnetism occurs. This robustness of Mott states coexisting with tunable interlayer magnetism provide novel and comprehensive analysis and insights for the research of breathing kagome Mott insulators.

Tunable altermagnetism via interchain engineering in parallel-assembled atomic chains

Tunable altermagnetism via interchain engineering in parallel-assembled atomic chains

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Deping Guo, Canbo Zong, Weihan Zhang, Cong Wang*, Junwei Liu*, and Wei Ji*

Altermagnetism has recently drawn considerable attention in three- and two-dimensional materials. Here we extend this concept to quasi-one-dimensional (Q1D) monolayers assembled from single-atomic magnetic chains. Through systematically examining nine types of structures, two stacking orders, intra- and interchain magnetic couplings, we identify four out of 30 promising structural prototypes for hosting altermagnetism, which yields 192 potential monolayer materials. We further confirm eight thermodynamically stable Q1D monolayers via high-throughput calculations. Using symmetry analysis and first-principles calculations, we find that the existence of altermagnetism is determined by the type of interchain magnetic coupling and predict three intrinsic altermagnets, CrBr3, VBr3, and MnBr3, due to their ferromagnetic interchain couplings and five extrinsic ones, CrF3, CrCl3, CrI3, FeCl3, and CoTe3, ascribed to their neglectable or antiferromagnetic interchain couplings. Moreover, the interchain magnetic coupling here is highly tunable by manipulating the interchain spacing, leading to experimentally feasible transitions between altermagnetic and nodal-line semiconducting states. In addition, applying external electric fields can further modulate the spin splitting. Our findings establish a highly tunable family of Q1D altermagnets, offering fundamental insights into the intricate relationship between geometry, electronic structure, and magnetism. These discoveries hold significant promises for experimental realization and future spintronic applications.