Room-temperature ferromagnetism in Fe-doped SnSe bulk single crystalline semiconductor

Room-temperature ferromagnetism in Fe-doped SnSe bulk single crystalline semiconductor

by | Nov 15, 2023 | 2023, 本组论文

Materials Today Physics 38,101251 (2023)
Guangqiang Mei, Wei Tan, Xingxia Cui, Cong Wang, Qing Yuan, Yafei Li, Cancan Lou, Xuefeng Hou, Mengmeng Zhao, Yong Liu, Wei Ji, Xiaona Zhang, Min Feng*, Limin Cao*

Abstract:

The quest for pragmatic room-temperature (RT) magnetic semiconductors (MSs) with a suitable bandgap constitutes one of the contemporary opportunities to be exploited. This may provide a materials platform for to bring new-generation ideal information device technologies into real-world applications where the otherwise conventionally separately utilized charge and spin are simultaneously exploited. Here we present RT ferromagnetism in an Fe-doped SnSe (Fe:SnSe) van der Waals (vdW) single crystalline ferromagnetic semiconductor (FMS) with a semiconducting bandgap of ∼1.19 eV (comparable to those of Si and GaAs). The synthesized Fe:SnSe single crystals feature a dilute Fe content of <1.0 at%, a Curie temperature of ∼310 K, a layered vdW structure nearly identical to that of pristine SnSe, and the absence of in-gap defect states. The Fe:SnSe vdW diluted magnetic semiconductor (DMS) single crystals are grown using a simple temperature-gradient melt-growth process, in which the magnetic Fe atom doping is realized uniquely using FeI2 as the dopant precursor whose melting point is low with respect to crystal growth, and which in principle possesses industrially unlimited scalability. Our work adds a new member in the family of long-searching RT magnetic semiconductors, and may establish a generalized strategy for large-volume production of related DMSs.

DOI:10.1016/j.mtphys.2023.101251

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Fe-Intercalation Dominated Ferromagnetism of van der Waals Fe3GeTe2

Fe-Intercalation Dominated Ferromagnetism of van der Waals Fe3GeTe2

by | Jun 7, 2023 | 2023, Highlighted, 本组论文

Advanced Materials 35, 2302568 (2023)

Yueshen Wu, Yuxiong Hu, Cong Wang, Xiang Zhou, Xiaofei Hou, Wei Xia, Yiwen Zhang, Jinghui Wang, Yifan Ding, Jiadian He, Peng Dong, Song Bao, Jinsheng Wen, Yanfeng Guo, Kenji Watanabe, Takashi Taniguchi, Wei Ji, Zhu-Jun Wang, Jun Li

Abstract:

Fe3GeTe2 have proven to be of greatly intrigue. However, the underlying mechanism behind the varying Curie temperature (Tc) values remains a puzzle. Here, we explored the atomic structure of Fe3GeTe2 crystals exhibiting Tc values of 160, 210, and 230 K. The elemental mapping reveals a Fe-intercalation on the interstitial sites within the van der Waals gap of the high- Tc (210 and 230 K) samples, which are observed an exchange bias effect by electrical transport measurements, while Fe intercalation or the bias effect is absent in the low-Tc (160 K) samples. First-principles calculations further suggest that the Fe-intercalation layer may be responsible for the local antiferromagnetic coupling that gives rise to the exchange bias effect, and that the interlayer exchange paths greatly contributes to the enhancement of Tc. This discovery of the Fe-intercalation layer elucidates the mechanism behind the hidden antiferromagnetic ordering that underlies the enhancement of Tc in Fe3GeTe2.

DOI: 10.1002/adma.202302568

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Multi-state data storage in a two-dimensional stripy antiferromagnet implemented by magnetoelectric effect

Multi-state data storage in a two-dimensional stripy antiferromagnet implemented by magnetoelectric effect

by | Jun 3, 2023 | 2023, Highlighted, 本组论文

Nature Communications 14, 3221 (2023) 

Pingfan Gu, Cong Wang, Dan Su, Zehao Dong, Qiuyuan Wang, Zheng Han, Kenji Watanabe, Takashi Taniguchi, Wei Ji, Young Sun & Yu Ye

Abstract:

A promising approach to the next generation of low-power, functional, and energy-efficient electronics relies on novel materials with coupled magnetic and electric degrees of freedom. In particular, stripy antiferromagnets often exhibit broken crystal and magnetic symmetries, which may bring about the magnetoelectric (ME) effect and enable the manipulation of intriguing properties and functionalities by electrical means. The demand for expanding the boundaries of data storage and processing technologies has led to the development of spintronics toward two-dimensional (2D) platforms. This work reports the ME effect in the 2D stripy antiferromagnetic insulator CrOCl down to a single layer. By measuring the tunneling resistance of CrOCl on the parameter space of temperature, magnetic field, and applied voltage, we verified the ME coupling down to the 2D limit and probed its mechanism. Utilizing the multi-stable states and ME coupling at magnetic phase transitions, we realize multi-state data storage in the tunneling devices. Our work not only advances the fundamental understanding of spin-charge coupling, but also demonstrates the great potential of 2D antiferromagnetic materials to deliver devices and circuits beyond the traditional binary operations.

DOI: 10.1038/s41467-023-39004-4

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Metal Halides for High-Capacity Energy Storage

Metal Halides for High-Capacity Energy Storage

by | Nov 11, 2022 | 2022, 本组论文

Small, DOI: 10.1002/smll.202205071

Hui Ma, Xusheng Wang, Cong Wang, Huanrong Zhang, Xinlei Ma, Wenjun Deng, Ruoqi Chen, Tianqi Cao, Yuqiao Chai, Yonglin He, Wei Ji, Rui Li, Jitao Chen, Junhui Ji, Wei Rao, Mianqi Xue

Abstract: High-capacity electrochemical energy storage systems are more urgently needed than ever before with the rapid development of electric vehicles and the smart grid. The most efficient way to increase capacity is to develop electrode materials with low molecular weights. The low-cost metal halides are theoretically ideal cathode materials due to their advantages of high capacity and redox potential. However, their cubic structure and large energy barrier for deionization impede their rechargeability. Here, the reversibility of potassium halides, lithium halides, sodium halides, and zinc halides is achieved through decreasing their dimensionality by the strong π–cation interactions between metal cations and reduced graphene oxide (rGO). Especially, the energy densities of KI-, KBr-, and KCl-based materials are 722.2, 635.0, and 739.4 Wh kg−1, respectively, which are higher than those of other cathode materials for potassium-ion batteries. In addition, the full-cell with 2D KI/rGO as cathode and graphite as anode demonstrates a lifespan of over 150 cycles with a considerable capacity retention of 57.5%. The metal halides-based electrode materials possess promising application prospects and are worthy of more in-depth researches.

DOI: 10.1002/smll.202205071

王聪 副教授Wang, Cong (Assoc. Prof.)

王聪 副教授
Wang, Cong (Assoc. Prof.)

by | Sep 18, 2022 | Faculty

王聪，中国人民大学物理学院副教授。

办公地点：北园物理楼209
电子邮箱：wcphys@ruc.edu.cn
电话：+86-10-62517997
传真：+86-10-62517997

教育经历
(1) 2014-09 至 2020-09, 中国人民大学, 物理, 博士

(2) 2010-09 至 2014-09, 中国人民大学, 物理, 学士

工作经历
2020-09 至 今, 中国人民大学, 理学院物理系, 副研究员

研究方向

利用第一性原理计算方法，结合部分实验数据，探索低维磁性和电极化材料的新奇物性及调控机制。

Selected Publications (代表性论文)
(1) Peiheng Jiang#; Cong Wang# ; Dachuan Chen; Zhicheng Zhong; Zhe Yuan; Zhong-Yi Lu; Wei Ji ; Stacking tunable interlayer magnetism in bilayer CrI3, Physical Review B, 2019, 99(14): 144401

(2) Cong Wang#; Xieyu Zhou#; Linwei Zhou; Yuhao Pan; Zhong-Yi Lu; Xiangang Wan; Xiaoqun Wang; Wei Ji ; Bethe-Slater-curve-like behavior in double super-exchange governed two-dimensional magnet ic bilayers, Physical Review B, 2020, (102): 020402-1-020402-7

(3) Bo Li#; Zhong Wan#; Cong Wang#; Peng Chen; Bevin Huang; Xing Cheng; Qi Qian; Jia Li; Zhengwe i Zhang; Guangzhuang Sun; Bei Zhao; Huifang Ma; Ruixia Wu; Zhongming Wei; Yuan Liu; Lei Liao; Yu Ye; Yu Huang; Xiaodong Xu; Xidong Duan; Wei Ji; Xiangfeng Duan ; Van der Waals epitaxial growth of air-stable CrSe2 nanosheets with thickness-tunable magnetic order, Nature Materials, 2021, 20(3 )

(4) Wang, Cong#; Zhou, Xieyu#; Zhou, Linwei; Tong, Ning-Hua; Lu, Zhong-Yi; Ji, Wei ; A family of high-temperature ferromagnetic monolayers with locked spin-dichroism-mobility anisotropy: MnNX and CrCX (X = Cl, Br, I; C = S, Se, Te), SCIENCE BULLETIN, 2019, 5(64): 293-300

(5) Kangkang Zhang#; Cong Wang#; Minhao Zhang; Zhanbin Bai; Fang-Fang Xie; Yuan-Zhi Tan; Yilv G uo; Kuo-Juei Hu; Lu Cao; Shuai Zhang; Xuecou Tu; Danfeng Pan; Lin Kang; Jian Chen; Peiheng Wu; Xu efeng Wang; Jinlan Wang; Junming Liu; You Song; Guanghou Wang; Fengqi Song; Wei Ji; Su-Yuan Xie; Su-Fei Shi; Mark A. Reed; Baigeng Wang ; A Gd@C82 single-molecule electret, Nature Nanotechnology , 2020, (15): 1019-1024

(6) Jing-Jing Xian#; Cong Wang#; Jin-Hua Nie; Rui Li; Mengjiao Han; Junhao Lin; Wen-Hao Zhang; Zhen-Yu Liu; Zhi-Mo Zhang; Mao-Peng Miao; Yangfan Yi; Shiwei Wu; Xiaodie Chen; Junbo Han; Zhengca i Xia; Wei Ji; Ying-Shuang Fu ; Spin mapping of intralayer antiferromagnetism and field-induced s pin reorientation in monolayer CrTe2, Nature Communications, 2022, 13(257)

(7) Geng Li#; Haitao Yang#; Peijie Jiang#; Cong Wang#; Qiuzhen Cheng; Shangjie Tian; Guangyuan Han; Chengmin Shen; Xiao Lin; Hechang Lei; Wei Ji; Ziqiang Wang; Hong-Jun Gao; Chirality locking charge density waves in a chiral crystal, Nature Communications, 2022, 13(2914)