Ultralow contact resistance in organic transistors via orbital hybridization

Jan 19, 2023

Nature Communications 14, 324 (2023)

Junpeng Zeng, Daowei He, Jingsi Qiao, Yating Li, Li Sun, Weisheng Li, Jiacheng Xie, Si Gao, Lijia Pan, Peng Wang, Yong Xu, Yun Li, Hao Qiu, Yi Shi, Jian-Bin Xu, Wei Ji & Xinran Wang

Organic field-effect transistors (OFETs) are of interest in unconventional form of electronics. However, high-performance OFETs are currently contact-limited, which represent a major challenge toward operation in the gigahertz regime. Here, we realize ultralow total contact resistance (Rc) down to 14.0 Ω ∙ cm in C10-DNTT OFETs by using transferred platinum (Pt) as contact. We observe evidence of Pt-catalyzed dehydrogenation of side alkyl chains which effectively reduces the metal-semiconductor van der Waals gap and promotes orbital hybridization. We report the ultrahigh performance OFETs, including hole mobility of 18 cm2 V−1 s−1, saturation current of 28.8 μA/μm, subthreshold swing of 60 mV/dec, and intrinsic cutoff frequency of 0.36 GHz. We further develop resist-free transfer and patterning strategies to fabricate large-area OFET arrays, showing 100% yield and excellent variability in the transistor metrics. As alkyl chains widely exist in conjugated molecules and polymers, our strategy can potentially enhance the performance of a broad range of organic optoelectronic devices.