Appl. Phys. Lett. 126, 103102 (2025).
Yiping Ouyang#, Rui Wang#, Zewen Wu#, Deping Guo# , Yang-Yang Ju, Jun Chen, Minhao Zhang*, Danfeng Pan, Xuecou Tu, Shuai Zhang, Lin Kang, Jian Chen, Peiheng Wu, Xuefeng Wang, Jianguo Wan, Wei Ji*, Xianghua Kong*, Yuan-Zhi Tan*, and Fengqi Song*
Abstract:
Quantum interference has been intensively pursued in molecular electronics to investigate and utilize coherent electron transport at the ultra-small level. An essential type of quantum interference with drastic destructive-constructive switching, known as Fano interference, has been widely reported in various kinds of nanoelectronics electronic systems, but not yet been electrostatically gating in a single-molecule device. Here, we fabricate the three-terminal single-molecule transistors based on the molecule with a long backbone and a side group to demonstrate the gate-controllable Fano interference. By applying bias and gate voltages, the two-dimensional differential conductance map shows the noncentrosymmetrical Fano patterns. Combined with the electron transport model and the first principles calculations, the resonant parameters of the Fano interference can unveil the coupling geometry of the junction and the spatial distribution of the resonant states. Our findings provide an instrumental method to induce and utilize the quantum interference behaviours at the molecular level.
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