Nano Letters 25(16), 6716–6724 (2025)
Yating Li, Mengmeng Niu, Junpeng Zeng, Quan Zhou, Xu Wu, Wei Ji, Yeliang Wang, Ren Zhu, Jingsi Qiao, Jianbin Xu, Yi Shi, Xinran Wang, and Daowei He
Abstract:
Organic semiconductors are highly promising as channel materials for energy-efficient, cost-effective, and flexible electronics. However, grain boundaries (GBs) can cause significant device performance variation, posing a major challenge for the development of high-performance organic circuits. In this work, we effectively passivated GB-induced traps in monolayer organic thin-film transistors (OTFTs) via p-type doping with the organic salt TrTPFB. The doping strategy broadens the mobility edge, effectively shielding GB-induced energy barriers and Coulomb scattering, and promotes deeper nonlocalized hybridization states for conduction. Consequently, the charge transport mechanism transitions from multiple trapping and release (MTR) to a more band-like behavior, even when GBs are present within the device channel. The doped OTFTs demonstrate ultralow mobility variation (1.4%) and threshold voltage variation (4.9%), as well as record-low contact resistant of RC = 0.6 Ω·cm, outperforming most single-crystal technologies. These performance metrics render doped monolayer polycrystalline films highly promising candidates for industrial-scale organic electronics.
DOI: 10.1021/acs.nanolett.5c00928
Online Preview:
