Nature Electronics, Accepted (2025)
Kuakua Lu#, Yun Li#,*, Qijing Wang#,* Linlu Wu#, Xinglong Ren, Xu Chen, Luhao Liu, Yating Li, Xiaoming Xu, Qingkai Zhang, Di Wang, Liqi Zhou, Mingfei Xiao, Sai Jiang, Mengjiao Pei, Haoxin Gong, William Wood, Ian E. Jacobs, Junzhan Wang, Gang Chen, Peng Wang, Zhaosheng Li, Chunfeng Zhang, Xinran Wang, Xu Wu, Yeliang Wang, Wei Ji, Songlin Li, Jingsi Qiao*, Yi Shi*, Henning Sirringhaus*
Abstract:
In single-crystal silicon metallic charge transport of field-induced carriers can be observed over a wide temperature range. Such behavior is rare in undoped organic semiconductors but important for fundamental understanding and engineering devices with advanced performance. Here, we report a metallic charge transport down to 8 K with a record-high electrical conductivity of 245 S cm−1 and a Hall mobility > 100 cm2 V−1 s−1 at 20 K in a two-dimensional, molecular crystal bilayer. We infer that this unique transport behavior originates from the phenyl bridge coupling between the two molecular layers, which suppresses molecular vibrations and weakens Coulomb interactions. We develop a controlled method for introducing defects, which allows the first observation of a disorder-driven metal-insulator transition in a molecular crystal. Our work demonstrates that exceptional charge transport properties can be attained in a molecular bilayer system with phenyl bridges, providing new incentives for exploring the molecular design space in this class of compounds more broadly.
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