Advanced Materials 37, 202411300 (2024)
Shimin Cao#, Runjie Zheng#, Cong Wang#, Ning Ma, Mantang Chen, Yuanjun Song, Ya Feng, Tingting Hao, Yu Zhang, Kenji Watanabe, Takashi Taniguchi, X.C. Xie, Wei Ji*, Yu Ye*, Zheng Han*, Jian-Hao Chen*
Abstract:
Charge carrier densities in electronic heterostructures are typically responsive to external electric fields or chemical doping but rarely to their magnetization history. Here, we demonstrate that magnetization acts as a non-volatile control parameter for the density of states in bilayer graphene (BLG) interfaced with the antiferromagnetic insulator chromium oxychloride (COC). Using capacitance measurements, we observe a hysteretic behavior in the density of states of BLG on a COC substrate in response to an external magnetic field, which is unrelated to the history of electrostatic gating. First-principles calculations revealed that such hysteresis arises from the magnetic-field-controlled charge transfer between BLG and COC during the antiferromagnetic (AFM) to ferrimagnetic-like (FiM) state phase transition of COC. Our work demonstrates that interfacial charging states can be effectively controlled magnetically, and it also shows that capacitance measurement is a suitable technique for detecting subtle changes not detectable via conventional resistivity measurements. These findings broaden the scope of proximity effects and open new possibilities for nanoelectronics applications.
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