Submitted (2025)
Xiang Xu#, Pengbin Liu#, Cong Wang#, Yudi Dai#, Bin Cheng#, Yan Jiang#, Hao Luo, Jinsong Wu, Shi-Jun Liang, Wei Ji*, Feng Miao*, Tianyou Zhai*, and Xing Zhou*
Abstract:
Two-dimensional (2D) lateral magnetic heterostructures offer a promising platform for exploring interfacial magnetism and related physical phenomena. Current synthesis strategies primarily rely on sequential edge-epitaxy. However, the second-step chemical vapor deposition process inevitably introduces various interfacial defects, disrupting the intrinsic magnetic properties. Here we propose an interface-driven endotaxy method that enables the synthesis of 2D lateral magnetic heterostructures (e.g., CuCrSe2, CuCr2Se4, AgCrSe2-CrSe2, CuCrS2-CuCr2S4) with atomically sharp interfaces. The growth of the second phase is triggered by a controlled interfacial phase transition, as revealed by in situ imaging of the growth, systematic microstructure characterizations, and theoretical calculations. The obtained heterointerfaces feature coherent lattice and symmetry breaking, leading to unique magnetic phenomena such as proximity-induced ferromagnetism near the interface and the topological Hall effect in CuCrSe2-CuCr2Se4. Moreover, in AgCrSe2-CrSe2, the synthesized CrSe2 exhibits a previously unreported defect spinel structure and room-temperature ferromagnetism at the heterointerface. The interface-driven endotaxy growth method opens a rational pathway for fabricating 2D lateral magnetic heterostructures, providing a robust material platform for fundamental studies and the development of magnetoelectronic and spintronic devices.
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