Hanxiang Wu, Jianfeng Guo, Suonan Zhaxi, Hua Xu, Shuo Mi, Le Wang, Shanshan Chen, Rui Xu, Wei Ji, Fei Pang and Zhihai Cheng
Abstract:
As a unique 2D magnetic material with self-intercalated structure, Cr5Te8 exhibits many intriguing magnetic properties. While its ferromagnetism of Cr5Te8 has been previously reported, the research on its magnetic domain remains unexplored. Herein, we have successfully fabricated 2D Cr5Te8 nanosheets with controlled thickness and lateral size by chemical vapor deposition (CVD). Then magnetic property measurement system revealed Cr5Te8 nanosheets exhibiting intense out-of-plane ferromagnetism with a Curie temperature (TC) of 176 K. Significantly, we reported for the first time two magnetic domains: magnetic bubbles and thickness-dependent maze-like magnetic domains in our Cr5Te8 nanosheets by cryogenic magnetic force microscopy (MFM). The domain width of the maze-like magnetic domains increases rapidly with decreasing sample thickness, meanwhile domain contrast decreases. This indicates the dominate role of ferromagnetism shifts from dipolar interactions to magnetic anisotropy. Our research not only establishes a pathway for the controllable growth of 2D magnetic materials, but also points towards novel avenues for regulating magnetic phases and methodically tuning domain characteristics.
Yanyan Geng, Le Lei, Haoyu Dong, Jianfeng Guo, Shuo Mi, Yan Li, Li Huang, Fei Pang, Rui Xu, Weichang Zhou, Zheng Liu, Wei Ji, and Zhihai Cheng
Abstract:
The layered transition metal dichalcogenide 1T−TaS2 has evoked great interest owing to its particularly rich electronic phase diagram including different charge density wave (CDW) phases. However, few studies have focused on its hysteretic electronic phase transitions based on the in-depth discussion of the delicate interplay among temperature-dependent electronic interactions. Here, we report a sequence of spatial electronic phase transitions in the hysteresis temperature range (160–230 K) of 1T−TaS2 via variable-temperature scanning tunneling microscopy. Several emergent electronic states are investigated at multiscale during the commensurate CDW–triclinic CDW (CCDW-TCDW) phase transitions: a spotty-CDW state above ∼160K, a network-CDW (NCDW) state above ∼180K during the warmup process, a belt-TCDW state below ∼230K, a NCDW state below ∼200K, and finally a mosaic-CDW state below ∼160K during cooldown from the TCDW phase. These emergent electronic states are associated with the delicate temperature-dependent competition and/or cooperation of stacking-dependent interlayer interactions, intralayer electron-electron correlations, and electron-phonon (e−ph) coupling of 1T−TaS2. Our results not only provide insight to understand the hysteretic electronic phase transitions in the correlated CDW state, but also pave a way to realize more exotic quantum states by accurately and effectively tuning various interior interactions in correlated materials.
The fabrication of one-dimensional (1D) magnetic systems on solid surfaces, although of high fundamental interest, has yet to be achieved for a crossover between two-dimensional (2D) magnetic layers and their associated 1D spin chain systems. In this study, we report the fabrication of 1D single-unit-cellwidth CrCl3 atomic wires and their stacked few-wire arrays on the surface of a van der Waals (vdW) superconductor NbSe2. Scanning tunneling microscopy/spectroscopy and first-principles calculations jointly revealed that the single wire shows an antiferromagnetic large-bandgap semiconducting state in an unexplored structure different from the well-known 2D CrCl3 phase. Competition among the total energies and nanostructure-substrate interfacial interactions of these two phases result in the appearance of the 1D phase. This phase was transformable to the 2D phase either prior to or after the growth for in situ or ex situ manipulations, in which the electronic interactions at the vdW interface play a nontrivial role that could regulate the dimensionality conversion and structural transformation between the 1D-2D CrCl3 phases.
After the preparation of 2D electronic flat band (EFB) in van der Waals (vdW) superlattices, recent measurements suggest the existence of 1D electronic flat bands (1D-EFBs) in twisted vdW bilayers. However, the realization of 1D-EFBs is experimentally elusive in untwisted 2D layers, which is desired considering their fabrication and scalability. Herein, the discovery of 1D-EFBs is reported in an untwisted in situ-grown two atomic-layer Bi(110)superlattice self-aligned on an SnSe(001) substrate using scanning probe microscopy measurements and density functional theory calculations. While the Bi-Bi dimers of Bi zigzag (ZZ) chains are buckled, the epitaxial lattice mismatch between the Bi and SnSe layers induces two 1D buckling reversal regions (BRRs) extending along the ZZ direction in each Bi(110)-11 x 17 supercell. A series of 1D-EFBs arises spatially following BRRs that isolate electronic states along the armchair (AC) direction and localize electrons in 1D extended states along ZZ due to quantum interference at a topological node. This work provides a generalized strategy for engineering 1D-EFBs in utilizing lattice mismatch between untwisted rectangular vdW layers.
Peigen Li, Nanshu Liu, Jihai Zhang, Shenwei Chen, Xuhan Zhou, Donghui Guo, Cong Wang, Wei Ji, and Dingyong Zhong
Abstract:
Single-layer heterostructures of magnetic materials are unique platforms for studying spin-related phenomena in two dimensions (2D) and have promising applications in spintronics and magnonics. Here, we report the fabrication of 2D magnetic lateral heterostructures consisting of single-layer chromium triiodide (CrI3) and chromium diiodide (CrI2). By carefully adjusting the abundance of iodine based on molecular beam epitaxy, single-layer CrI3–CrI2 heterostructures were grown on Au(111) surfaces with nearly atomic-level seamless boundaries. Two distinct types of interfaces, i.e., zigzag and armchair interfaces, have been identified by means of scanning tunneling microscopy. Our scanning tunneling spectroscopy study combined with density functional theory calculations indicates the existence of spin-polarized ground states below and above the Fermi energy localized at the boundary. Both the armchair and zigzag interfaces exhibit semiconducting nanowire behaviors with different spatial distributions of density of states. Our work presents a novel low-dimensional magnetic system for studying spin-related physics with reduced dimensions and designing advanced spintronic devices.
Liwei Liu* Xuan Song Jiaqi Dai Han Yang Yaoyao Chen Xinyu Huang Zeping Huang Hongyan Ji Yu Zhang Xu Wu Jia-Tao Sun Quanzhen Zhang Jiadong Zhou Yuan Huang Jingsi Qiao* Wei Ji Hong-Jun Gao Yeliang Wang*
Abstract:
Layered charge-density-wave (CDW) materials have gained increasing interest due to their CDW stacking-dependent electronic properties for practical applications. Among the large family of CDW materials, those with star of David (SOD) patterns are very important due to the potentials for quantum spin liquid and related device applications. However, the spatial extension and the spin coupling information down to the nanoscale remain elusive. Here, we report the study of heterochiral CDW stackings in bilayer (BL) NbSe2 with high spatial resolution. We reveal that there exist well-defined heterochiral stackings, which have inhomogeneous electronic states among neighboring CDW units (star of David, SOD), significantly different from the homogeneous electronic states in the homochiral stackings. Intriguingly, the different electronic behaviors are spatially localized within each SOD with a unit size of 1.25 nm, and the gap sizes are determined by the different types of SOD stackings. Density functional theory (DFT) calculations match the experimental measurements well and reveal the SOD-stacking-dependent correlated electronic states and antiferromagnetic/ferromagnetic couplings. Our findings give a deep understanding of the spatial distribution of interlayer stacking and the delicate modulation of the spintronic states, which is very helpful for CDW-based nanoelectronic devices.
