The newly-discovered chromium-based kagome metal CsCr3Sb5 has garnered significant interest due to its strong electron correlations, intertwined orders and potential for unconventional superconductivity under high pressure. However, the nature of superconducting and magnetic interactions during the transition from the parent compound CsV3Sb5 to CsCr3Sb5 remains elusive. Here, we report the discovery of spatially anisotropic Kondo resonance which intertwines with the superconducting gap, facilitated by the introduction of magnetic Cr impurities into the kagome superconductor CsV3Sb5. In addition to the gradual suppression of long-ranged charge-density-wave orders, dilute Cr dopants induce local magnetic moments, giving rise to the emergence of Kondo resonances. In addition, the Kondo resonance forms spatially anisotropic ripple-like structures around the Cr dopants, breaking all local mirror symmetries. This anisotropy arises from the antiferromagnetic coupling between itinerant electrons and the Cr-induced spin-up electrons. Remarkably, as the Kondo screening develops, the coherence peak and depth of superconducting gap with finite zero-energy conductance significantly enhances. It indicates that non-superconducting pairs at the Fermi surface in the parent compound participate in the Kondo effect, effectively screening the magnetic moments of Cr dopants while simultaneously enhancing the superfluid density. Our findings pave a unique pathway for exploring the interplay between superconductivity and local magnetic moments in kagome systems.
Peng-Jie Guo, Xiao-Yao Hou, Ze-Feng Gao, Huan-Cheng Yang, Wei Ji, Zhong-Yi Lu
Abstract:
Altermagnetic materials, with real-space antiferromagnetic arrangement and reciprocal-space anisotropic spin splitting, have attracted much attention. However, the spin splitting is small in most altermagnetic materials, which is a disadvantage to their application in electronic devices. In this study, based on symmetry analysis and the first-principles electronic structure calculations, we predict for the first time two Luttinger compensated bipolarized magnetic semiconductors Mn(CN)2 and Co(CN)2 with isotropic spin splitting as in the ferromagnetic materials. Our further analysis shows that the Luttinger compensated magnetism here depends not only on spin group symmetry, but also on the crystal field splitting and the number of d-orbital electrons. In addition, the polarized charge density indicates that both Mn(CN)2 and Co(CN)2 have the quasi-symmetry T{\tau} , resulting from the crystal field splitting and the number of d-orbital electrons. The Luttinger compensated magnetism not only has the zero total magnetic moment as the antiferromagnetism, but also has the isotropic spin splitting as the ferromagnetism, thus our work not only provides theoretical guidance for searching Luttinger compensated magnetic materials with distinctive properties, but also provides a material basis for the application in spintronic devices.
Xiaoqing Chen#, Huijuan Zhao#, Ruixiang Fei, Chun Huang, Jingsi Qiao, Cheng Sun, Haiming Zhu, Li Zhan, Zehua Hu, Songlin Li, Li Yang, Zemin Tang, Lianhui Wang, Yi Shi, Wei Ji, Jian-Bin Xu, Li Gao*, Xuetao Gan* & Xinran Wang*
Abstract:
Two-dimensional materials offer strong light-matter interaction and design flexibility beyond conventional bulk semiconductors, but an intrinsic limit is the low absorption imposed by the atomic thickness. A long-sought-after goal is to achieve complementary absorption enhancement through energy transfer (ET) to break this intrinsic limit. However, it is found challenging due to the competing charge transfer process and lack of resonance in exciton states. Here, we report highly efficient energy transfer (ET) in a 2D hybrid organic-inorganic heterostructure (HOIST) of Me-PTCDI/WS2. Resonant ET is observed leading to enhanced WS2 PL by as much as 124 times. We identify Dexter exchange between the Frenkel state in donor and an excited 2s state in acceptor as the main ET mechanism, as supported by density functional theory calculations. We further demonstrate ET-enhanced phototransistor devices with enhanced responsivity by nearly 1000 times without sacrificing the response time. Our results expand the understanding of inter-layer relaxation.
Xiangqi Wang†, Cong Wang†, Yupeng Wang†, Chunhui Ye, Azizur Rahman, Min Zhang, Suhan Son, Jun Tan*, Zengming Zhang*, Wei Ji*, Je-Geun Park6,7,8, and Kai-Xuan Zhang†*
Abstract:
Van der Waals (vdW) magnets, with their two-dimensional (2D) atomic structures, provide a unique platform for exploring magnetism at the nanoscale. Although there have been numerous reports on their diverse quantum properties, the emergent interfacial magnetism— artificially created at the interface between two layered magnets—remains largely unexplored. This work presents observations of such emergent interfacial magnetism at the ferromagnet/antiferromagnet interface in a vdW heterostructure. We report the discovery of an intermediate Hall resistance plateau in the anomalous Hall loop, indicative of emergent interfacial antiferromagnetism fostered by the heterointerface. This plateau can be stabilized and further manipulated under varying pressures but collapses under high pressures over 10 GPa. Our theoretical calculations reveal that charge transfer at the interface is pivotal in establishing the interlayer antiferromagnetic spin-exchange interaction. This work illuminates the previously unexplored emergent interfacial magnetism at a vdW interface comprised of a ferromagnetic metal and an antiferromagnetic insulator, and highlights its gradual evolution under increasing pressure. These findings enrich the portfolio of emergent interfacial magnetism and pave the way for future investigations on vdW magnetic interfaces and the development of next-generation spintronic devices.
Yanyan Geng+, Haoyu Dong+, Renhong Wang+, Jianfeng Guo, Shuo Mi, Le Lei, Yan Li, Li Huang, Fei Pang, Rui Xu, Weiqiang Yu, Hong-Jun Gao, Wei Ji*, Weichang Zhou*, and Zhihai Cheng*
Abstract:
The delicate interplay among the complex intra-/inter-layer electron-electron and electron-lattice interactions is the fundamental prerequisite of these exotic quantum states, such as superconductivity, nematic order, and checkerboard charge order. Here we explore the filling-dependent multiple stable intertwined electronic and atomic orders of flat-band state of 1T-TaS2 encompassing hole order, phase orders, coexisting left- and right-chiral orders and mixed phase/chiral orders via scanning tunneling microscopy (STM). Combining first principles calculations, the novel emergent electronic/ atomic orders can be attributed to the weakening of electron-electron correlations and stacking-dependent interlayer interactions. Moreover, achiral intermediate ring-like clusters and nematic charge density wave (CDW) states are successfully realized in intralayer chiral domain wall and interlayer heterochiral stacking regions through chiral overlap configurations. Our study not only deepens the understanding of filling-dependent electronic/atomic orders in flat-band systems, but also offers new perspectives for exploring exotic quantum states in correlated electronic systems.
Two-dimensional room-temperature ferromagnet CrTe2 is a promising candidate material for spintronic applications. However, its large-scale and cost-effective synthesis remains a challenge. Here, we report the fine controllable synthesis of wafer-scale 1T-CrTe2 films on a SiO2/Si substrate using plasma-enhanced chemical vapor deposition at temperatures below 400 ºC. Magnetic hysteresis measurements reveal that the synthesized 1T-CrTe2 films exhibit perpendicular magnetic anisotropy along with distinct step-like magnetic transitions. We find that 1T-CrTe2 is susceptible to oxygen adsorption even in ambient conditions. Our theoretical calculations indicate that the oxidation of surface layers is crucial for the absence of out-of-plane easy axis in few-layer CrTe2, while the interlayer antiferromagnetic coupling among the upper surface layers leads to the observed step-like magnetic transitions. Our study provides a Si-CMOS compatible approach for the fabrication of magnetic two-dimensional materials and highlights how unintentional adsorbents or dopants can significantly influence the magnetic behaviors of these materials.
