Deping Guo#, Pengjie Guo#, Shijing Tan, Min Feng, Limin Cao, Zheng-Xin Liu*, Kai Liu*,
Zhong-Yi Lu, Wei Ji*
Abstract
Dirac nodal-line semimetals (DNLSMs) host novel quasiparticle excitations and intriguing transport properties, which are, however, easily perturbed under strong spin-orbit coupling (SOC), especially in low-dimensions. Two-dimensional (2D) layers have numerous advantages and are under continuous development; however, 2D-DNLSMs resistant to SOC are yet to be discovered. Here, we report the C_2v×Z_2^T little co-group, a non-symmorphic symmetry we found in 2D, guarantees a robust 2D-DNLSM against SOC, which could be imposed in three-atomic-layer (3-AL) Bismuth (the brick phase, a novel Bi allotrope) and other layered materials. Intriguingly, (4n+2) valence electrons fill the electronic bands in 3-AL Bi, such that the nodal line passes the Fermi level where other low-energy states are gapped, allowing feasible observation of DNLSM-induced phenomena without interference from other bands in future transport measurements. Thus, our study demonstrates an unprecedented category of layered materials, allowing for the exploration of nearly isolated DNL states in 2D.
Abstract: Magnetic topological insulators (MTIs) have received considerable attention owing to the demonstration of various quantum phenomena, such as the quantum anomalous Hall effect and topological magnetoelectric effect. The intrinsic superlatticelike layered MTIs MnBi2Te4/(Bi2Te3)n have been extensively investigated mainly through transport measurements; however, a direct investigation of their superlattice-sensitive magnetic behaviors is relatively rare. In this paper, we report a microscopic real space investigation of the magnetic phase behaviors in MnBi4Te7 using cryogenic magnetic force microscopy. The intrinsic robust A type antiferromagnetic (AFM), surface spin-flip (SSF) + AFM, ferromagnetic (FM) + SSF + AFM, and forced FM phases are sequentially visualized via the increased external magnetic field, consistent with the magnetic behavior in the M-H curve. The temperature-dependent magnetic phase evolution behaviors are further investigated to obtain a complete H-T phase diagram of MnBi4Te7. Tentative local phase manipulation via the stray field of the magnetic tip is demonstrated by transforming the AFM into the FM phase in the surface layers of MnBi4Te7. Our study provides key real-space ingredients for understanding the complicated magnetic, electronic, and topological properties of such intrinsic MTIs and suggests new directions for manipulating spin textures and locally controlling their exotic properties.
Mismatched lattice constants at a van der Waals epitaxy interface often introduce in-plane strains to the lattice of the epitaxial layer, termed epitaxy strain, wherein the strains do not follow the intralayer Poisson’s relation. In this study, we obtained the magnetic phase diagrams of CrSe2 and CrTe2 mono- and bilayers under epitaxy strain up to 8%, as predicted using density functional theory calculations. The magnetic phase diagrams indicate that the in-plane epitaxy strain manipulates either the intra- or interlayer magnetism. The in-plane strain varies the interlayer distance, defined using an interlayer Poisson’s ratio, which determines whether the interlayer magnetism follows a Bethe–Slater curve-like (BSC-like) or a reversed BSC-like behavior, depending on the in-plane magnetism. The tunability of the intralayer magnetism is a result of competing intralayer Cr–Cr superexchange interactions. A graphene substrate was introduced to examine the validity of our diagrams in practice. This study also afforded a tentative explanation on the previously reported magnetizations in CrSe2 and CrTe2 epitaxial mono- or bilayers under epitaxy strains, which had given rise to some controversy.
Two-dimensional (2D) magnetic materials with magnetic anisotropy can form magnetic order at finitetemperature and monolayer limit. Their macroscopic magnetism is closely related to the number of layers andstacking forms, and their magnetic exchange coupling can be regulated by a variety of external fields. Thesenovel properties endow 2D magnetic materials with rich physical connotation and potential application value,thus having attracted extensive attention. In this paper, the recent advances in the experiments and theoreticalcalculations of 2D magnets are reviewed. Firstly, the common magnetic exchange mechanisms in several 2Dmagnetic materials are introduced. Then, the geometric and electronic structures of some 2D magnets and theirmagnetic coupling mechanisms are introduced in detail according to their components. Furthermore, we discusshow to regulate the electronic structure and magnetism of 2D magnets by external (field modulation andinterfacial effect) and internal (stacking and defect) methods. Then we discuss the potential applications ofthese materials in spintronics devices and magnetic storage. Finally, the encountered difficulties and challengesof 2D magnetic materials and the possible research directions in the future are summarized and prospected. DOI: 10.7498/aps.71.20220301
Zheng, Fangyuan; Guo, Deping; Huang, Lingli; Wong, Lok Wing; Chen, Xin; Wang, Cong; Cai, Yuan; Wang, Ning; Lee, Chun-Sing; Lau, Shu Ping; Ly, Thuc Hue; Ji, Wei and Zhao, Jiong
Abstract
Phase patterning in polymorphic two-dimensional (2D) materials offers diverse properties that extend beyond what their pristine structures can achieve. If precisely controllable, phase transitions can bring exciting new applications for nanometer-scale devices and ultra-large-scale integrations. Here, the focused electron beam is capable of triggering the phase transition from the semiconducting T” phase to metallic T’ and T phases in 2D rhenium disulfide (ReS2) and rhenium diselenide (ReSe2) monolayers, rendering ultra-precise phase patterning technique even in sub-nanometer scale is found. Based on knock-on effects and strain analysis, the phase transition mechanism on the created atomic vacancies and the introduced substantial in-plane compressive strain in 2D layers are clarified. This in situ high-resolution scanning transmission electron microscopy (STEM) and in situ electrical characterizations agree well with the density functional theory (DFT) calculation results for the atomic structures, electronic properties, and phase transition mechanisms. Grain boundary engineering and electrical contact engineering in 2D are thus developed based on this patterning technique. The patterning method exhibits great potential in ultra-precise electron beam lithography as a scalable top-down manufacturing method for future atomic-scale devices. DOI:10.1002/advs.202200702
Lukas Rogée, Lvjin Wang, Yi Zhang, Songhua Cai, Peng Wang, Manish Chhowalla, Wei Ji & Shu Ping Lau
Two-dimensional materials with out-of-plane (OOP) ferroelectric and piezoelectric properties are highly desirable for the realization of ultrathin ferro- and piezoelectronic devices. We demonstrate unexpected OOP ferroelectricity and piezoelectricity in untwisted, commensurate, and epitaxial MoS2/WS2 heterobilayers synthesized by scalable one-step chemical vapor deposition. We show d33 piezoelectric constants of 1.95 to 2.09 picometers per volt that are larger than the natural OOP piezoelectric constant of monolayer In2Se3 by a factor of ~6. We demonstrate the modulation of tunneling current by about three orders of magnitude in ferroelectric tunnel junction devices by changing the polarization state of MoS2/WS2 heterobilayers. Our results are consistent with density functional theory, which shows that both symmetry breaking and interlayer sliding give rise to the unexpected properties without the need for invoking twist angles or moiré domains.
