Intrinsic antiferromagnetism in van der Waals (vdW) monolayer (ML) crystals enriches our understanding of two-dimensional (2D) magnetic orders and presents several advantages over ferromagnetism in spintronic applications. However, studies of 2D intrinsic antiferromagnetism are sparse, owing to the lack of net magnetisation. Here, by combining spin-polarised scanning tunnelling microscopy and first-principles calculations, we investigate the magnetism of vdW ML CrTe2, which has been successfully grown through molecular-beam epitaxy. We observe a stable antiferromagnetic (AFM) order at the atomic scale in the ML crystal, whose bulk is ferromagnetic, and correlate its imaged zigzag spin texture with the atomic lattice structure. The AFM order exhibits an intriguing noncollinear spin reorientation under magnetic fields, consistent with its calculated moderate magnetic anisotropy. The findings of this study demonstrate the intricacy of 2D vdW magnetic materials and pave the way for their in-depth analysis.
Ping Chen, Jinbo Pan, Wenchao Gao, Bensong Wan, Xianghua Kong, Yang Cheng, Kaihui Liu, Shixuan Du, Wei Ji, Caofeng Pan & Zhong Lin Wang
Abstract
Transition metal dichalcogenides (TMDCs) with 2H phase are expected to be building blocks in next-generation electronics; however, they suffer from electrical anisotropy, which is the basics for multi-terminal artificial synaptic devices, digital inverters, and anisotropic memtransistors, which are highly desired in neuromorphic computing. Herein, the anisotropic carrier mobility from 2H WSe2 is reported, where the anisotropic degree of carrier mobility spans from 0.16 to 0.95 for various WSe2 field-effect transistors under a gate voltage of −60 V. Phonon scattering, impurity ions scattering, and defect scattering are excluded for anisotropic mobility. An intrinsic screening layer is proposed and confirmed by Z-contrast scanning transmission electron microscopy (STEM) imaging to respond to the electrical anisotropy. Seven types of intrinsic screening layers are created and calculated by density functional theory to evaluate the modulated electronic structures, effective masses, and scattering intensities, resulting in anisotropic mobility. The discovery of anisotropic carrier mobility from 2H WSe2 provides a degree of freedom for adjusting the physical properties of 2H TMDCs and fertile ground for exploring and integrating TMDC electronic transistors with better performance along the direction of high mobility.
Yanping Guo, Linlu Wu, Jinghao Deng, Linwei Zhou, Wei Jiang, Shuangzan Lu, Da Huo, Jiamin Ji, Yusong Bai, Xiaoyu Lin, Shunping Zhang, Hongxing Xu, Wei Ji & Chendong Zhang
Abstract
Semiconducting heterojunctions (HJs), comprised of atomically thin transition metal dichalcogenides (TMDs), have shown great potentials in electronic and optoelectronic applications. Organic/TMD hybrid bilayers hold enhanced pumping efficiency of interfacial excitons, tunable electronic structures and optical properties, and other superior advantages to these inorganic HJs. Here, we report a direct probe of the interfacial electronic structures of a crystalline monolayer (ML) perylene-3,4,9,10-tetracarboxylic-dianhydride (PTCDA)/ML-WSe2 HJ using scanning tunneling microscopy, photoluminescence, and first-principle calculations. Strong PTCDA/WSe2 interfacial interactions lead to appreciable hybridization of the WSe2 conduction band with PTCDA unoccupied states, accompanying with a significant amount of PTCDA-to-WSe2 charge transfer (by 0.06 e/PTCDA). A type-II band alignment was directly determined with a valence band offset of ∼ 1.69 eV, and an apparent conduction band offset of ∼ 1.57 eV. Moreover, we found that the local stacking geometry at the HJ interface differentiates the hybridized interfacial states.
Yuan Huang, Yun-Kun Wang, Xin-Yu Huang, Guan-Hua Zhang, Xu Han, Yang Yang, Yunan Gao, Lei Meng, Yushu Wang, Guang-Zhou Geng, Li-Wei Liu, Lin Zhao, Zhi-Hai Cheng, Xin-Feng Liu, Ze-Feng Ren, Hui-Xia Yang, Yufeng Hao, Hong-Jun Gao, Xing-Jiang Zhou, Wei Ji & Ye-Liang Wang
Abstract
Two-dimensional (2D) materials are highly sensitive to substrates, interfaces, and the surrounding environments. Suspended 2D materials are free from substrate-induced effects, thus an ideal approach to study their intrinsic properties. However, it is very challenging to prepare large-area suspended 2D materials with high efficiency. Here we report a universal method, based on pretreatments of densely patterned hole array substrates with either oxygen-plasma or gold film deposition, to prepare large-area suspended mono- and few-layer 2D materials. Multiple structural, optical, and electrical characterization tools were used to fully evaluate the improved performance of various suspended 2D layers. Some of these observations reported in this study are: (1) Observation of a new Raman low frequency mode for the suspended MoS2; (2) Significantly stronger photoluminescence (PL) and second harmonic generation (SHG) signals of suspended WSe2, which enables the study of new optical transition processes; (3) The low energy electron diffraction pattern on suspended MoS2 also exhibits much sharper spots than that on the supported area; and (4) The mobility of suspended graphene device approaches 300 000 cm2 V−1 s−1, which is desirable to explore the intrinsic properties of graphene. This work provides an innovative and efficient route for fabricating suspended 2D materials, and we expect that it can be broadly used for studying intrinsic properties of 2D materials and in applications of hybrid active nanophotonic and electronic devices.
Xiao-Wei Wang, Lin-Fang Hou, Wei Huang, Xi-Biao Ren, Wei Ji & Chuan-Hong Jin
Abstract
Defects play vital roles in tailoring structures and properties of materials including the atomically thin two-dimensional (2D) materials, and increasing demands are requested to find effective ways to realize the defect engineering, i.e., tuning the defects and thus the materials’ structure–property in a well-controlled way. Herein, we propose a novel method to tune the structures and configurations of one-dimensional (1D) line defects in monolayer MoS2 via mass transport induced structural transformation. By using atomic-resolved annular dark-field scanning transmission electron microscopy (ADF-STEM), we demonstrate in situ that sulfur vacancy line defect can be healed locally into defect-free MoS2 lattice via the desorption of Mo atoms from vacancy lines and adsorption into a moving Mo cluster. Furthermore, directional transport of Mo atoms (or Mo cluster) along the sulfur vacancy lines can induce the formation of Mo chains. Such a mass transport induced defect tuning provides more operational routes for the rational defect designing and property tuning in MoS2 as well as other related 2D materials.
