主要工作成果 Selected Publications (代表性年度论文) Ferroelectricity in untwisted heterobilayers of transition metal dichalcogenides Lukas ROGÉE#, Lvjin WANG#,…, Manish CHHOWALLA*, Wei JI*, and Shu Ping LAU* Science 376(6596) pp.973-978 (2022)
Van der Waals epitaxial growth of air-stable CrSe2 nanosheets with thickness-tunable magnetic order Bo Li#, Zhong Wang#, Cong Wang#, Peng Chen#, Xidong Duan*, Wei Ji*, Xiangfeng Duan*, et al. Nature Materials 20, 818-825 (2021)
Universal mechanical exfoliation of large-area 2D crystals Yuan Huang, Yu-Hao Pan, Rong Yang … Peter Sutter*, Wei Ji*, Xing-Jiang Zhou* and Hong-Jun Gao* Nature Communications 11, 2453 (2020)
Stacking tunable interlayer magnetism in bilayer CrI3 Peiheng Jiang, Cong Wang … Zhicheng Zhong* and Wei Ji* Phys. Rev. B 99, 144401 (2019) arXiv:1806.09274 PRB Editors’ Suggestion
Few-layer Tellurium: one-dimensional-like layered elementary semiconductor with striking physical properties Jingsi Qiao, Yuhao Pan, Feng Yang, Cong Wang, Yang Chai and Wei Ji* Sci. Bull. 63(3), 159-168 (2018)
(2) Nanshu Liu, Si Zhou*, Jijun Zhao, Photoinduced spin injection and ferromagnetism in 2D group III monochalcogenides, J. Phys. Chem. Lett. 153, 590 (2022)
(3) Nanshu Liu, Si Zhou*, Jijun Zhao, Visible-light overall water splitting on g-C3N4 decorated by subnanometer oxide clusters, Mater. Today Phys., 16, 100312 (2021)
(4) Nanshu Liu, Yanyan Zhao, Si Zhou*, Jijun Zhao, CO2 reduction on p-block metal oxide overlayers on metal substrates—2D MgO as a prototype, J. Mater. Chem. A, 8, 5688 (2020)
(5) Nanshu Liu, Si Zhou*, Jijun Zhao, High-Curie-temperature ferromagnetism in bilayer CrI3 on bulk semiconducting substrates, Phys. Rev. Mater., 4, 094003 (2020)
(6) Nanshu Liu, Junfeng Zhang*, Si Zhou*, Jijun Zhao, Tuning the electronic properties of bilayer black phosphorene with the twist angle, J. Mater. Chem. C, 8, 6264 (2020)
(7) Shaofeng Li#, Yan Zhang#, Nanshu Liu#, et. al, Operando revealing dynamic reconstruction of NiCo carbonate hydroxide for high-rate energy storage, Joule, 4, 673 (2020)
Advanced exfoliation techniques are crucial for exploring the intrinsic properties and applications of 2D materials. Though the recently discovered Au-enhanced exfoliation technique provides an effective strategy for the preparation of large-scale 2D crystals, the high cost of gold hinders this method from being widely adopted in industrial applications. In addition, direct Au contact could significantly quench photoluminescence (PL) emission in 2D semiconductors. It is therefore crucial to find alternative metals that can replace gold to achieve efficient exfoliation of 2D materials. Here, the authors present a one-step Ag-assisted method that can efficiently exfoliate many large-area 2D monolayers, where the yield ratio is comparable to Au-enhanced exfoliation method. Differing from Au film, however, the surface roughness of as-prepared Ag films on SiO2/Si substrate is much higher, which facilitates the generation of surface plasmons resulting from the nanostructures formed on the rough Ag surface. More interestingly, the strong coupling between 2D semiconductor crystals (e.g., MoS2, MoSe2) and Ag film leads to a unique PL enhancement that has not been observed in other mechanical exfoliation techniques, which can be mainly attributed to enhanced light-matter interaction as a result of extended propagation of surface plasmonic polariton (SPP). This work provides a lower-cost and universal Ag-assisted exfoliation method, while at the same time offering enhanced SPP-matter interactions. DOI:10.1002/advs.202204247
Deping Guo#, Pengjie Guo#, Shijing Tan, Min Feng, Limin Cao, Zheng-Xin Liu*, Kai Liu*,
Zhong-Yi Lu, Wei Ji*
Abstract
Dirac nodal-line semimetals (DNLSMs) host novel quasiparticle excitations and intriguing transport properties, which are, however, easily perturbed under strong spin-orbit coupling (SOC), especially in low-dimensions. Two-dimensional (2D) layers have numerous advantages and are under continuous development; however, 2D-DNLSMs resistant to SOC are yet to be discovered. Here, we report the C_2v×Z_2^T little co-group, a non-symmorphic symmetry we found in 2D, guarantees a robust 2D-DNLSM against SOC, which could be imposed in three-atomic-layer (3-AL) Bismuth (the brick phase, a novel Bi allotrope) and other layered materials. Intriguingly, (4n+2) valence electrons fill the electronic bands in 3-AL Bi, such that the nodal line passes the Fermi level where other low-energy states are gapped, allowing feasible observation of DNLSM-induced phenomena without interference from other bands in future transport measurements. Thus, our study demonstrates an unprecedented category of layered materials, allowing for the exploration of nearly isolated DNL states in 2D.